MT28EW512ABA1LPN-0SIT

Product Overview

Category

MT28EW512ABA1LPN-0SIT belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The data stored in MT28EW512ABA1LPN-0SIT is retained even when power is removed.
• High capacity: This device has a storage capacity of 512 megabits (64 megabytes).
• Fast access time: It provides quick access to stored data, ensuring efficient operation of the system.
• Low power consumption: MT28EW512ABA1LPN-0SIT is designed to consume minimal power during operation.
• Reliable: It offers high reliability and durability, making it suitable for long-term data storage.

Package and Quantity

MT28EW512ABA1LPN-0SIT is available in a compact package, typically in the form of an integrated circuit (IC) chip. The quantity may vary depending on the manufacturer's packaging specifications.

Specifications

• Storage Capacity: 512 megabits (64 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Access Time: <100 nanoseconds
• Operating Temperature Range: -40°C to +85°C

Pin Configuration

The detailed pin configuration of MT28EW512ABA1LPN-0SIT is as follows:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VCC | Power Supply Voltage | | 2 | GND | Ground | | 3 | CS | Chip Select | | 4 | SCK | Serial Clock | | 5 | SI | Serial Input | | 6 | SO | Serial Output | | 7 | WP | Write Protect | | 8 | HOLD | Hold Input |

Functional Features

MT28EW512ABA1LPN-0SIT offers the following functional features:

• High-speed data transfer: It supports fast data transfer rates, allowing for efficient read and write operations.
• Sector-based erase: The memory can be erased at the sector level, enabling selective data modification.
• Write protection: The device includes a write protect pin (WP) to prevent accidental data modification.
• Low power consumption: MT28EW512ABA1LPN-0SIT is designed to minimize power consumption during operation, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Reliable and durable
• Low power consumption
• Sector-based erase capability

Disadvantages

• Limited write endurance: The number of times data can be written to the memory is limited, which may affect its lifespan.
• Relatively higher cost compared to other types of memory.

Working Principles

MT28EW512ABA1LPN-0SIT utilizes flash memory technology. It stores data by trapping electric charges within floating gate transistors. These charges represent binary information (0s and 1s). The stored data can be accessed and modified using appropriate commands and interfaces.

Application Field Plans

MT28EW512ABA1LPN-0SIT finds applications in various fields, including: - Personal computers - Laptops and notebooks - Smartphones and tablets - Automotive electronics - Industrial control systems - Consumer electronics

Alternative Models

Some alternative models that offer similar functionality to MT28EW512ABA1LPN-0SIT include: - MT28EW256ABA1LPC-0SIT - AT25SF041-SSHD-T - S25FL128SAGMFI011

These models provide comparable storage capacity, interface compatibility, and functional features.

In conclusion, MT28EW512ABA1LPN-0SIT is a non-volatile memory device with high storage capacity, fast access time, and low power consumption. It finds applications in various electronic devices and offers sector-based erase capability. While it has limited write endurance and relatively higher cost, it provides reliable data storage and efficient operation.