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MT28F008B3VG-9 T

MT28F008B3VG-9 T

Product Overview

Category

MT28F008B3VG-9 T belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

  • High storage capacity
  • Non-volatile memory
  • Fast read and write speeds
  • Compact size
  • Low power consumption

Package

MT28F008B3VG-9 T is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital data reliably and efficiently.

Packaging/Quantity

MT28F008B3VG-9 T is typically packaged in trays or reels, with each package containing a specific quantity of flash memory chips.

Specifications

  • Storage Capacity: 8 gigabytes (GB)
  • Interface: Parallel
  • Voltage Supply: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Up to 10 years
  • Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The pin configuration of MT28F008B3VG-9 T is as follows:

  1. VCC - Power supply voltage
  2. GND - Ground
  3. A0-A18 - Address inputs
  4. DQ0-DQ15 - Data input/output lines
  5. WE# - Write enable
  6. CE# - Chip enable
  7. OE# - Output enable
  8. RP# - Ready/Busy status
  9. RY/BY# - Ready/Busy output
  10. WP# - Write protect

Functional Features

  • High-speed data transfer
  • Error correction capabilities
  • Block erase and program operations
  • Automatic sleep mode for power saving
  • Hardware and software write protection options

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast read and write speeds
  • Compact size for easy integration
  • Low power consumption
  • High endurance and reliability

Disadvantages

  • Relatively higher cost compared to other memory technologies
  • Limited number of program/erase cycles

Working Principles

MT28F008B3VG-9 T utilizes a floating gate transistor technology to store digital data. It employs a combination of electrical charges to represent binary information (0s and 1s). The data can be written, read, and erased using specific voltage levels and control signals.

Detailed Application Field Plans

MT28F008B3VG-9 T finds applications in various electronic devices that require non-volatile data storage. Some common application fields include:

  1. Smartphones and tablets
  2. Digital cameras
  3. Portable media players
  4. Solid-state drives (SSDs)
  5. Industrial control systems
  6. Automotive electronics

Detailed and Complete Alternative Models

  1. MT29F008B3VG-9 T
  2. MT28F016B3VG-9 T
  3. MT29F016B3VG-9 T
  4. MT28F032B3VG-9 T
  5. MT29F032B3VG-9 T

These alternative models offer similar functionality and specifications, providing options for different storage capacities and requirements.

In conclusion, MT28F008B3VG-9 T is a flash memory product that offers high storage capacity, fast data transfer speeds, and reliable performance. It finds applications in various electronic devices and provides an efficient solution for data storage needs.

Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng MT28F008B3VG-9 T trong giải pháp kỹ thuật

Sure! Here are 10 common questions and answers related to the application of MT28F008B3VG-9 T in technical solutions:

  1. Q: What is MT28F008B3VG-9 T? A: MT28F008B3VG-9 T is a specific model of flash memory chip manufactured by Micron Technology.

  2. Q: What is the capacity of MT28F008B3VG-9 T? A: MT28F008B3VG-9 T has a capacity of 8 megabits (1 megabyte) of data storage.

  3. Q: What is the operating voltage range for MT28F008B3VG-9 T? A: The operating voltage range for MT28F008B3VG-9 T is typically between 2.7V and 3.6V.

  4. Q: What is the access time of MT28F008B3VG-9 T? A: The access time of MT28F008B3VG-9 T is 90 nanoseconds (ns).

  5. Q: What interface does MT28F008B3VG-9 T use? A: MT28F008B3VG-9 T uses a parallel interface for data transfer.

  6. Q: Can MT28F008B3VG-9 T be used in industrial applications? A: Yes, MT28F008B3VG-9 T is designed to withstand harsh environmental conditions and can be used in industrial applications.

  7. Q: Is MT28F008B3VG-9 T compatible with other flash memory chips? A: MT28F008B3VG-9 T follows industry-standard pinouts and protocols, making it compatible with other similar flash memory chips.

  8. Q: What is the typical lifespan of MT28F008B3VG-9 T? A: MT28F008B3VG-9 T has a typical lifespan of 100,000 program/erase cycles.

  9. Q: Can MT28F008B3VG-9 T be used in automotive applications? A: Yes, MT28F008B3VG-9 T meets the requirements for automotive-grade components and can be used in automotive applications.

  10. Q: Are there any specific programming considerations for MT28F008B3VG-9 T? A: Yes, MT28F008B3VG-9 T requires specific voltage levels and timing sequences during programming, which should be followed as per the datasheet provided by Micron Technology.

Please note that these answers are general and may vary depending on the specific application and requirements. It's always recommended to refer to the official documentation and datasheets for accurate information.