MT28F128J3BS-12 MET TR

Product Overview

Category

MT28F128J3BS-12 MET TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The data stored in this memory device is retained even when power is removed.
• High capacity: The MT28F128J3BS-12 MET TR has a storage capacity of 128 megabits (16 megabytes).
• Fast access time: It offers quick read and write operations, ensuring efficient data transfer.
• Reliable: This memory device is designed to withstand harsh environmental conditions and has a high endurance rating.

Package

The MT28F128J3BS-12 MET TR is available in a small form factor package, making it suitable for space-constrained applications. It is commonly packaged in a surface-mount technology (SMT) package.

Essence

The essence of MT28F128J3BS-12 MET TR lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

This product is typically sold in reels or trays containing multiple units. The exact quantity may vary depending on the supplier.

Specifications

• Manufacturer: MET TR
• Model: MT28F128J3BS-12
• Memory Type: Flash memory
• Capacity: 128 megabits (16 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Access Time: 120 nanoseconds
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT28F128J3BS-12 MET TR has a standard pin configuration with the following pins:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable
6. CE#: Chip enable
7. OE#: Output enable
8. RP#/BYTE#: Reset/byte select
9. WP#/ACC: Write protect/acceleration
10. RY/BY#: Ready/busy

Functional Features

• High-speed read and write operations
• Block erase capability for efficient data management
• Built-in error correction codes (ECC) for data integrity
• Low power consumption in standby mode
• Support for multiple programming algorithms

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Reliable and durable
• Compact form factor
• Wide operating temperature range

Disadvantages

• Higher cost compared to other memory technologies
• Limited endurance (limited number of erase/write cycles)

Working Principles

The MT28F128J3BS-12 MET TR utilizes flash memory technology, which is based on the principle of trapping electrical charges within a floating gate structure. These trapped charges represent binary data (0s and 1s). The stored data can be accessed and modified through specific electrical signals applied to the device's pins.

Detailed Application Field Plans

The MT28F128J3BS-12 MET TR is widely used in various applications, including: - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics - Medical devices - Networking equipment

Detailed and Complete Alternative Models

• MT28F128J3RG-12 MET TR
• MT28F128J3BS-15 MET TR
• MT28F128J3RG-15 MET TR
• MT28F128J3BS-20 MET TR
• MT28F128J3RG-20 MET TR

These alternative models offer similar specifications and functionality to the MT28F128J3BS-12 MET TR, providing customers with options based on their specific requirements.

In conclusion, the MT28F128J3BS-12 MET TR is a high-capacity non-volatile memory device that offers fast access times and reliable data storage. Its compact form factor and wide operating temperature range make it suitable for various electronic applications. While it has advantages such as high capacity and durability, it also has limitations in terms of cost and endurance. Nonetheless, it remains a popular choice in the industry due to its performance and reliability.