MT28F128J3FS-12 MET

Product Overview

Category

MT28F128J3FS-12 MET belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The data stored in this memory device is retained even when power is turned off.
• High capacity: The MT28F128J3FS-12 MET has a storage capacity of 128 megabits (16 megabytes).
• Fast access time: It provides quick access to stored data, ensuring efficient performance.
• Reliable: This memory device offers high reliability and durability, making it suitable for long-term data storage.
• Low power consumption: It operates at low power levels, conserving energy in electronic devices.

Package

The MT28F128J3FS-12 MET is available in a compact and industry-standard package, which ensures compatibility with various electronic systems.

Essence

The essence of MT28F128J3FS-12 MET lies in its ability to store and retrieve data reliably and efficiently, providing an essential component for electronic devices' functionality.

Packaging/Quantity

This memory device is typically packaged individually or in reels, depending on the manufacturer's specifications. The quantity per package varies but is commonly available in multiples of 10 or 100 units.

Specifications

• Model: MT28F128J3FS-12 MET
• Memory Type: Flash memory
• Capacity: 128 megabits (16 megabytes)
• Access Time: 120 nanoseconds
• Supply Voltage: 3.3V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The MT28F128J3FS-12 MET has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. WE#
31. RE#
32. BYTE#
33. WP#
34. RY/BY#
35. CE#
36. OE#
37. I/O0
38. I/O1
39. I/O2
40. I/O3
41. I/O4
42. I/O5
43. I/O6
44. I/O7
45. GND
46. NC
47. NC
48. NC

Functional Features

• Erase and Program Operations: The MT28F128J3FS-12 MET supports both erase and program operations, allowing users to modify stored data.
• Block Architecture: It utilizes a block architecture, enabling efficient erasure and programming of specific memory blocks without affecting others.
• Error Correction Code (ECC): This memory device incorporates ECC to ensure data integrity and reliability during read and write operations.
• Write Protection: The MT28F128J3FS-12 MET includes write protection features to prevent accidental modification or deletion of stored data.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Reliable and durable
• Supports block architecture for efficient data management

Disadvantages

• Limited endurance: Flash memory has a limited number of erase/write cycles before it may become unreliable.
• Higher cost per unit compared to other types of memory.

Working Principles

The MT28F128J3FS-12 MET utilizes the principles of flash memory technology. It stores data by trapping electric charges in floating gate transistors, which can be erased or programmed using specific voltage levels. When reading data, the stored charges are detected, allowing retrieval of the stored information.

Detailed Application Field Plans

The MT28F128J3FS-12 MET finds applications in various electronic devices and systems, including: 1. Personal computers 2. Laptops and notebooks 3. Smartphones and tablets 4. Digital cameras 5. Automotive electronics 6. Industrial control systems 7. Medical devices 8. Consumer electronics

Detailed and Complete Alternative Models

1. MT28F128J3RG-15 MET
2. MT