MT28F128J3RG-12 MET TR belongs to the category of non-volatile memory devices.
This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.
The MT28F128J3RG-12 MET TR is available in a compact and durable package, which ensures easy integration into various electronic devices.
The essence of this product lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.
The MT28F128J3RG-12 MET TR is typically packaged in trays or reels, depending on the quantity ordered. The exact packaging quantity can vary based on customer requirements.
The MT28F128J3RG-12 MET TR has the following pin configuration:
The MT28F128J3RG-12 MET TR utilizes flash memory technology to store and retrieve data. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written, charges are trapped in the memory cells, representing the stored information. During read operations, the charges are detected and converted back into digital data.
The MT28F128J3RG-12 MET TR is widely used in various applications, including: - Solid-state drives (SSDs) - Digital cameras - Set-top boxes - Automotive electronics - Industrial control systems
These alternative models offer similar functionality to the MT28F128J3RG-12 MET TR and can be considered based on specific application requirements.
In conclusion, the MT28F128J3RG-12 MET TR is a reliable and high-capacity non-volatile memory device used for data storage in various electronic devices. Its fast access time, durability, and low power consumption make it suitable for a wide range of applications. However, it has limited endurance compared to some alternative models and may have a relatively higher cost per unit.
Sure! Here are 10 common questions and answers related to the application of MT28F128J3RG-12 MET TR in technical solutions:
Q: What is the capacity of the MT28F128J3RG-12 MET TR? A: The MT28F128J3RG-12 MET TR has a capacity of 128 megabits (16 megabytes).
Q: What is the operating voltage range for this memory device? A: The operating voltage range for the MT28F128J3RG-12 MET TR is typically between 2.7V and 3.6V.
Q: What is the access time of this memory device? A: The access time for the MT28F128J3RG-12 MET TR is 120 nanoseconds (ns).
Q: Can this memory device be used in industrial applications? A: Yes, the MT28F128J3RG-12 MET TR is designed for industrial applications and can withstand harsh environments.
Q: Does this memory device support random access read and write operations? A: Yes, the MT28F128J3RG-12 MET TR supports random access read and write operations.
Q: Is this memory device compatible with standard microcontrollers? A: Yes, the MT28F128J3RG-12 MET TR is compatible with standard microcontrollers that support the required interface (e.g., parallel or serial).
Q: What is the endurance rating of this memory device? A: The MT28F128J3RG-12 MET TR has an endurance rating of at least 100,000 program/erase cycles.
Q: Can this memory device operate at high temperatures? A: Yes, the MT28F128J3RG-12 MET TR is designed to operate at extended temperature ranges, typically up to 85°C.
Q: Does this memory device have built-in error correction capabilities? A: Yes, the MT28F128J3RG-12 MET TR features built-in error correction code (ECC) capabilities to ensure data integrity.
Q: Can this memory device be used in automotive applications? A: Yes, the MT28F128J3RG-12 MET TR meets the requirements for automotive applications and can withstand automotive temperature ranges.
Please note that these answers are general and may vary depending on the specific application and use case. It's always recommended to refer to the official documentation and datasheet for accurate and detailed information.