MT28F320J3BS-11 GMET

Product Overview

Category

MT28F320J3BS-11 GMET belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The data stored in MT28F320J3BS-11 GMET is retained even when power is turned off.
• High capacity: This flash memory device has a storage capacity of 32 gigabytes (GB).
• Fast data transfer: MT28F320J3BS-11 GMET offers high-speed data transfer rates, allowing for quick access to stored information.
• Reliable performance: It is designed to provide reliable and consistent performance over an extended period of use.

Package and Quantity

MT28F320J3BS-11 GMET is available in a compact package that ensures easy integration into electronic devices. It is typically sold individually or in bulk quantities depending on the requirements of the customer.

Specifications

• Model: MT28F320J3BS-11 GMET
• Storage Capacity: 32 GB
• Interface: Universal Flash Storage (UFS)
• Operating Voltage: 2.7V - 3.6V
• Data Transfer Rate: Up to 600 megabytes per second (MB/s)
• Operating Temperature Range: -25°C to 85°C

Pin Configuration

The detailed pin configuration of MT28F320J3BS-11 GMET is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE - Chip enable
4. WE - Write enable
5. RE - Read enable
6. A0-A18 - Address lines
7. DQ0-DQ31 - Data input/output lines
8. RY/BY# - Ready/Busy status
9. WP# - Write protect
10. RESET# - Reset signal

Functional Features

MT28F320J3BS-11 GMET offers the following functional features:

1. High-speed data access: The flash memory device allows for fast read and write operations, enabling quick retrieval and storage of data.
2. Error correction: It incorporates advanced error correction techniques to ensure data integrity and reliability.
3. Wear leveling: MT28F320J3BS-11 GMET employs wear leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the device.
4. Power management: It includes power-saving features that optimize energy consumption, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rates
• Reliable performance
• Compact package size
• Power-efficient operation

Disadvantages

• Relatively high cost compared to other storage options
• Limited endurance compared to some other types of memory

Working Principles

MT28F320J3BS-11 GMET utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge applied to it. When reading data, the charge level of each cell is measured to determine the stored information. During writing, the charge level is adjusted to store new data.

Application Field Plans

MT28F320J3BS-11 GMET finds applications in various electronic devices requiring high-capacity and reliable data storage. Some potential application fields include: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems

Alternative Models

For users seeking alternative flash memory devices, the following models can be considered: - MT28F320J3BS-12 GMET: Similar to MT28F320J3BS-11 GMET but with a higher operating temperature range (-40°C to 85°C). - MT28F320J3BS-10 GMET: Similar to MT28F320J3BS-11 GMET but with a lower storage capacity (16 GB).

These alternative models provide options based on specific requirements and constraints.

In conclusion, MT28F320J3BS-11 GMET is a high-capacity flash memory device that offers fast data transfer rates and reliable performance. It finds applications in various electronic devices and provides advantages such as large storage capacity and power efficiency. However, it may have limitations in terms of cost and endurance compared to other storage options.