MT28F320J3RP-11 ET TR

Product Overview

Category

MT28F320J3RP-11 ET TR belongs to the category of Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High-speed read and write operations: Allows for quick access to stored data.
• Large storage capacity: Can store a significant amount of data.
• Compact size: Takes up minimal space in electronic devices.
• Durable: Resistant to physical damage and can withstand harsh environmental conditions.

Package

MT28F320J3RP-11 ET TR is available in a small form factor package, designed to fit seamlessly into electronic devices.

Essence

The essence of MT28F320J3RP-11 ET TR lies in its ability to provide reliable and high-performance data storage solutions for a wide range of electronic devices.

Packaging/Quantity

MT28F320J3RP-11 ET TR is typically packaged in reels or trays, depending on the quantity ordered. The exact packaging and quantity may vary based on customer requirements.

Specifications

• Model: MT28F320J3RP-11 ET TR
• Memory Type: Flash Memory
• Capacity: 32GB
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 100MHz
• Package Type: Thin Small Outline Package (TSOP)

Detailed Pin Configuration

The pin configuration of MT28F320J3RP-11 ET TR is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. HOLD: Hold input for suspending data transfer
4. WP: Write protect input for protecting the memory from being written
5. SCK: Serial clock input for SPI communication
6. SI: Serial data input for SPI communication
7. SO: Serial data output for SPI communication
8. CE: Chip enable input for selecting the device

Functional Features

• High-speed data transfer: MT28F320J3RP-11 ET TR supports fast read and write operations, allowing for efficient data handling.
• Error correction: Built-in error correction algorithms ensure data integrity and reliability.
• Low power consumption: The flash memory operates at low power levels, conserving energy in electronic devices.
• Wear-leveling: The memory controller evenly distributes data writes across the memory cells, extending the lifespan of the flash memory.

Advantages and Disadvantages

Advantages

• Large storage capacity
• High-speed data transfer
• Compact size
• Durable and reliable
• Low power consumption

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

MT28F320J3RP-11 ET TR utilizes NAND flash memory technology. It stores data by trapping electric charges in floating gate transistors. When a voltage is applied, the trapped charges can be read or modified, allowing for data storage and retrieval.

Detailed Application Field Plans

MT28F320J3RP-11 ET TR finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to MT28F320J3RP-11 ET TR include: - MT29F32G08CBABA - S34ML01G200TFI000 - IS37SML01G2 - W25Q32JVSSIQ

These models offer similar features and specifications, providing alternative options for flash memory solutions.

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