MT28F800B3WP-9 B TR

Product Overview

Category

The MT28F800B3WP-9 B TR belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The MT28F800B3WP-9 B TR retains stored data even when power is disconnected.
• High capacity: This flash memory device offers a storage capacity of 8 megabits (1 megabyte).
• Fast access time: With a read access time of 90 nanoseconds, it enables quick retrieval of stored data.
• Low power consumption: The MT28F800B3WP-9 B TR is designed to operate efficiently with minimal power requirements.
• Extended temperature range: It can withstand a wide temperature range, making it suitable for use in various environments.

Package and Quantity

The MT28F800B3WP-9 B TR is available in a surface-mount package. Each package contains one flash memory device.

Specifications

• Memory Type: NOR Flash
• Organization: 1M x 8
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: TSOP
• Pin Count: 48
• Data Retention: 20 years

Detailed Pin Configuration

The MT28F800B3WP-9 B TR has a total of 48 pins. Here is a detailed pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. WE#
31. RE#
32. BYTE#
33. WP#
34. RY/BY#
35. VSSQ
36. DQ0
37. DQ1
38. DQ2
39. DQ3
40. DQ4
41. DQ5
42. DQ6
43. DQ7
44. VSSD
45. VCCQ
46. VPP
47. NC
48. VSS

Functional Features

• Erase and Program Operations: The MT28F800B3WP-9 B TR supports both erase and program operations, allowing users to modify stored data.
• Block Architecture: It is organized into multiple blocks, enabling efficient management of data storage and retrieval.
• Error Correction Code (ECC): This flash memory device incorporates ECC algorithms to ensure data integrity and reliability.
• Write Protection: The WP# pin can be used to protect the stored data from accidental modification.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Wide temperature range tolerance
• Reliable data retention

Disadvantages

• Limited write endurance: Flash memory devices have a finite number of erase/write cycles before they may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

The MT28F800B3WP-9 B TR utilizes the principles of NOR flash memory technology. It stores data in a grid-like structure of memory cells, where each cell represents a bit of information. The data can be read, erased, and programmed using specific electrical signals applied to the pins of the device.

Detailed Application Field Plans

The MT28F800B3WP-9 B TR is widely used in various electronic devices that require non-volatile storage. Some of its application fields include:

1. Mobile Devices: Smartphones, tablets, and portable media players utilize this flash memory for storing operating systems, applications, and user data.
2. Digital Cameras: Flash memory provides high-speed storage for capturing and storing photos and videos.
3. Automotive Electronics: Used in infotainment systems, navigation systems, and instrument clusters for data storage.
4. Industrial Control Systems: Flash memory is employed in industrial automation, robotics, and control systems for program storage and data logging.

Alternative Models

Here are some alternative models that offer similar functionality:

1. MT28F800B5WG-8 B TR
2. MT28F800B