Category: Memory Device
Use: Data storage and retrieval
Characteristics: High capacity, fast read/write speeds
Package: BGA (Ball Grid Array)
Essence: Non-volatile memory for electronic devices
Packaging/Quantity: Individually packaged, quantity varies based on order size
The MT29F16G08ABCBBH1-12:B TR has a total of 63 pins. The pin configuration is as follows:
Advantages: - Large storage capacity - Fast read/write speeds - Compact package size - Wide operating temperature range
Disadvantages: - Limited endurance cycles - Higher cost compared to other memory options
The MT29F16G08ABCBBH1-12:B TR is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. The memory cells can be electrically programmed (writing data) and erased, allowing for data storage and retrieval. The device utilizes various control signals and voltage levels to perform read, write, and erase operations.
The MT29F16G08ABCBBH1-12:B TR is commonly used in various electronic devices that require high-capacity data storage, such as:
These alternative models offer similar specifications and functionality to the MT29F16G08ABCBBH1-12:B TR, providing options for different application requirements.
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1. What is the MT29F16G08ABCBBH1-12:B TR?
The MT29F16G08ABCBBH1-12:B TR is a specific model of NAND flash memory chip manufactured by Micron Technology.
2. What is the capacity of the MT29F16G08ABCBBH1-12:B TR?
The MT29F16G08ABCBBH1-12:B TR has a capacity of 16 gigabytes (GB).
3. What is the speed rating of the MT29F16G08ABCBBH1-12:B TR?
The "12:B" in the model number indicates that the MT29F16G08ABCBBH1-12:B TR has a synchronous interface and operates at a maximum clock frequency of 12 MHz.
4. What are some common applications for the MT29F16G08ABCBBH1-12:B TR?
The MT29F16G08ABCBBH1-12:B TR is commonly used in various technical solutions, including embedded systems, solid-state drives (SSDs), industrial automation, automotive electronics, and consumer electronics.
5. What is the voltage requirement for the MT29F16G08ABCBBH1-12:B TR?
The MT29F16G08ABCBBH1-12:B TR operates at a voltage range of 2.7V to 3.6V.
6. Does the MT29F16G08ABCBBH1-12:B TR support wear leveling?
Yes, the MT29F16G08ABCBBH1-12:B TR supports wear leveling, which helps distribute write operations evenly across the memory cells to extend the lifespan of the NAND flash memory.
7. Can the MT29F16G08ABCBBH1-12:B TR be used as a boot device?
Yes, the MT29F16G08ABCBBH1-12:B TR can be used as a boot device in various systems, including embedded devices and SSDs.
8. What is the operating temperature range of the MT29F16G08ABCBBH1-12:B TR?
The MT29F16G08ABCBBH1-12:B TR has an operating temperature range of -40°C to +85°C, making it suitable for use in harsh environments.
9. Does the MT29F16G08ABCBBH1-12:B TR support error correction codes (ECC)?
Yes, the MT29F16G08ABCBBH1-12:B TR supports built-in hardware ECC, which helps detect and correct errors that may occur during data read or write operations.
10. Is the MT29F16G08ABCBBH1-12:B TR RoHS compliant?
Yes, the MT29F16G08ABCBBH1-12:B TR is RoHS (Restriction of Hazardous Substances) compliant, ensuring that it meets environmental regulations regarding the use of hazardous materials.