Micron Technology Inc.
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MT29F16G08ABCBBH1-12IT:B

MT29F16G08ABCBBH1-12IT:B

Basic Information Overview

  • Category: Memory Device
  • Use: Data storage and retrieval
  • Characteristics:
    • Non-volatile memory
    • High capacity (16GB)
    • NAND Flash technology
  • Package: BGA (Ball Grid Array)
  • Essence: Reliable and high-performance data storage solution
  • Packaging/Quantity: Individual units in anti-static packaging

Specifications

  • Model: MT29F16G08ABCBBH1-12IT:B
  • Capacity: 16GB
  • Interface: Parallel
  • Voltage: 3.3V
  • Speed: 12ns
  • Organization: 2K pages, 64 pages per block, 2048 blocks

Detailed Pin Configuration

The MT29F16G08ABCBBH1-12IT:B has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | A0-A18 | Address inputs | | 19 | DQ0-DQ15 | Data inputs/outputs | | 20 | WE# | Write enable control | | 21 | CE# | Chip enable control | | 22 | RE# | Read enable control | | 23 | CLE | Command latch enable | | 24 | ALE | Address latch enable | | 25 | WP# | Write protect control | | 26 | R/B# | Ready/busy status | | 27 | NC | No connection | | 28 | GND | Ground |

Functional Features

  • High-speed data transfer
  • Error correction capability
  • Wear-leveling algorithm for extended lifespan
  • Block management for efficient data storage and retrieval
  • Power-saving features

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast data transfer rate
  • Reliable and durable
  • Low power consumption

Disadvantages

  • Higher cost compared to other memory options
  • Limited write endurance

Working Principles

The MT29F16G08ABCBBH1-12IT:B is based on NAND Flash technology. It stores data in a series of memory cells organized in blocks. Each block consists of multiple pages, and each page contains several sectors. Data can be written to and read from these memory cells using specific commands and control signals.

Detailed Application Field Plans

The MT29F16G08ABCBBH1-12IT:B is widely used in various applications, including: - Solid-state drives (SSDs) - USB flash drives - Embedded systems - Consumer electronics - Industrial automation

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the MT29F16G08ABCBBH1-12IT:B include: - Samsung K9K8G08U0B - Micron MT29F16G08ABACAWP - Toshiba THGBM5G6A2JBAIR

Please note that the above list is not exhaustive and there may be other alternative models available in the market.

In conclusion, the MT29F16G08ABCBBH1-12IT:B is a high-capacity NAND Flash memory device with reliable performance and various applications. Its advanced features make it suitable for use in a wide range of electronic devices requiring non-volatile data storage.

Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng MT29F16G08ABCBBH1-12IT:B trong giải pháp kỹ thuật

  1. Question: What is the capacity of the MT29F16G08ABCBBH1-12IT:B memory chip?
    Answer: The MT29F16G08ABCBBH1-12IT:B has a capacity of 16 gigabits (2 gigabytes).

  2. Question: What is the operating voltage range for this memory chip?
    Answer: The MT29F16G08ABCBBH1-12IT:B operates at a voltage range of 2.7V to 3.6V.

  3. Question: What is the maximum clock frequency supported by this memory chip?
    Answer: The MT29F16G08ABCBBH1-12IT:B supports a maximum clock frequency of 100 MHz.

  4. Question: Is this memory chip compatible with NAND flash controllers?
    Answer: Yes, the MT29F16G08ABCBBH1-12IT:B is designed to be compatible with NAND flash controllers.

  5. Question: What is the page size of this memory chip?
    Answer: The MT29F16G08ABCBBH1-12IT:B has a page size of 2,112 bytes.

  6. Question: Does this memory chip support random access read and write operations?
    Answer: Yes, the MT29F16G08ABCBBH1-12IT:B supports random access read and write operations.

  7. Question: What is the typical program and erase cycle endurance of this memory chip?
    Answer: The MT29F16G08ABCBBH1-12IT:B has a typical program and erase cycle endurance of 10,000 cycles.

  8. Question: Can this memory chip operate in industrial temperature ranges?
    Answer: Yes, the MT29F16G08ABCBBH1-12IT:B is designed to operate in industrial temperature ranges (-40°C to 85°C).

  9. Question: Does this memory chip support hardware data protection features?
    Answer: Yes, the MT29F16G08ABCBBH1-12IT:B supports hardware data protection features like ECC (Error Correction Code) and bad block management.

  10. Question: Is this memory chip RoHS (Restriction of Hazardous Substances) compliant?
    Answer: Yes, the MT29F16G08ABCBBH1-12IT:B is RoHS compliant, ensuring it meets environmental regulations.