MT29F1G08ABADAWP-ITE:D

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile
  • High capacity
  • Fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Flash memory technology
• Packaging/Quantity: Individual units or reels

Specifications

• Capacity: 1 Gigabit (1 Gb)
• Organization: 128 Megabytes x 8 bits
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Speed:
  • Read: Up to 70 ns
  • Program: Up to 2 ms
  • Erase: Up to 2 ms

Detailed Pin Configuration

The MT29F1G08ABADAWP-ITE:D has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | A0-A18 | Address inputs | | 3 | DQ0-DQ7 | Data inputs/outputs | | 4 | WE# | Write Enable control input | | 5 | CE# | Chip Enable control input | | 6 | RE# | Read Enable control input | | 7 | CLE | Command Latch Enable control input | | 8 | ALE | Address Latch Enable control input | | 9 | WP# | Write Protect control input | | 10 | RY/BY# | Ready/Busy status output | | 11 | RESET# | Reset control input | | 12 | NC | No Connection | | 13 | GND | Ground |

Functional Features

• High-speed data transfer
• Reliable and durable storage
• Low power consumption
• Error correction capabilities
• Block erase and program operations
• Wear-leveling algorithms for extended lifespan

Advantages

• Large storage capacity
• Fast read/write speeds
• Non-volatile memory retains data even without power
• Suitable for a wide range of applications
• Compact package size for easy integration

Disadvantages

• Limited endurance (limited number of erase/write cycles)
• Relatively higher cost compared to other memory technologies
• Sensitive to high temperatures and extreme environmental conditions

Working Principles

The MT29F1G08ABADAWP-ITE:D utilizes flash memory technology, which is based on the principle of trapping electric charges within floating gate transistors. These trapped charges represent binary data (0s and 1s) and can be stored or retrieved by applying appropriate voltage levels to the control inputs.

Detailed Application Field Plans

The MT29F1G08ABADAWP-ITE:D is commonly used in various electronic devices and systems, including: - Solid-state drives (SSDs) - USB flash drives - Digital cameras - Mobile phones - Tablets - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the MT29F1G08ABADAWP-ITE:D include: - Samsung K9F1G08U0D - Micron MT29F1G08ABBDAH4-IT:D - Toshiba TC58NVG1S3HTA00

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