MT29F1G08ABAEAH4-ITX:E TR

Product Overview

Category

MT29F1G08ABAEAH4-ITX:E TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G08ABAEAH4-ITX:E TR offers a storage capacity of 1 gigabit (1 Gb).
• Fast data transfer rate: It provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F1G08ABAEAH4-ITX:E TR is typically packaged in surface mount technology (SMT) packages. The exact packaging type and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 1 Gb
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Data Transfer Rate: Up to 200 Mbps
• Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

The MT29F1G08ABAEAH4-ITX:E TR has a standard pin configuration with the following pins:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ7: Data input/output
8. R/B: Ready/busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Functional Features

• Page Program: Allows data to be written into the memory cells in page increments.
• Block Erase: Enables erasing of data in large blocks, improving efficiency.
• Random Access: Provides random access to any location within the memory array.
• Wear Leveling: Distributes write and erase operations evenly across the memory cells, extending the product's lifespan.
• Error Correction Code (ECC): Implements ECC algorithms to detect and correct errors during data read/write operations.

Advantages and Disadvantages

Advantages

• High storage capacity for data-intensive applications.
• Fast data transfer rate for quick access to stored information.
• Reliable performance ensures data integrity.
• Low power consumption extends battery life.
• Compact package allows for easy integration into various devices.

Disadvantages

• Limited number of erase/program cycles compared to other non-volatile memory technologies.
• Higher cost per unit compared to alternative memory solutions.

Working Principles

The MT29F1G08ABAEAH4-ITX:E TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of data using a floating-gate transistor. The data is written by applying voltage to specific memory cells, and it can be read by detecting the electrical charge stored in the cells.

Detailed Application Field Plans

The MT29F1G08ABAEAH4-ITX:E TR finds application in various electronic devices, including: - Smartphones and tablets for storing operating systems, applications, and user data. - Digital cameras for storing high-resolution photos and videos. - Solid-state drives (SSDs) for fast and reliable data storage in computers and servers.

Detailed and Complete Alternative Models

1. MT29F1G08ABAEAH4-ITX:E
2. MT29F1G08ABAEAH4-ITX:F
3. MT29F1G08ABAEAH4-ITX:G
4. MT29F1G08ABAEAH4-ITX:H
5. MT29F1G08ABAEAH4-ITX:I

These alternative models offer similar specifications and functionality, providing flexibility in choosing the most suitable NAND flash memory solution for specific applications.

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