MT29F1G08ABAEAWP-IT:E

Product Overview

Category

MT29F1G08ABAEAWP-IT:E belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F1G08ABAEAWP-IT:E offers a storage capacity of 1 gigabit.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F1G08ABAEAWP-IT:E comes in a compact package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F1G08ABAEAWP-IT:E NAND flash memory is typically packaged in surface mount technology (SMT) packages. The exact packaging type and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 1 gigabit
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F1G08ABAEAWP-IT:E NAND flash memory has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. CLE: Command Latch Enable
5. ALE: Address Latch Enable
6. RE: Read Enable
7. WE: Write Enable
8. R/B: Ready/Busy status
9. DQ0-DQ7: Data Input/Output

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasing of data in block-sized units.
• Random Access: Provides random access to any memory location for read or write operations.
• Error Correction Code (ECC): Implements advanced ECC algorithms to ensure data integrity.
• Wear Leveling: Distributes write operations evenly across memory blocks, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Low power consumption
• Compact package size
• Reliable performance

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Relatively higher cost per gigabit compared to alternative memory solutions

Working Principles

MT29F1G08ABAEAWP-IT:E utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using a floating-gate transistor. The data is written by applying appropriate voltage levels to the control gates and storing the charge in the floating gate. Reading involves sensing the charge level in the floating gate to determine the stored data.

Detailed Application Field Plans

The MT29F1G08ABAEAWP-IT:E NAND flash memory finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to MT29F1G08ABAEAWP-IT:E NAND flash memory include: - MT29F1G08ABADAWP-IT:E - MT29F1G08ABBEAWP-IT:E - MT29F1G08ABCEAWP-IT:E - MT29F1G08ABDEAWP-IT:E

These alternative models offer similar specifications and functionality, providing flexibility for different design requirements.

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