MT29F1G08ABBEAHC-IT:E

Product Overview

Category

MT29F1G08ABBEAHC-IT:E belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G08ABBEAHC-IT:E offers a storage capacity of 1 gigabit (1 Gb).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F1G08ABBEAHC-IT:E is typically packaged in a surface-mount technology (SMT) package. The exact packaging and quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 1 Gb
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT

Detailed Pin Configuration

The MT29F1G08ABBEAHC-IT:E has a standard pin configuration as follows:

1. VCC: Power supply voltage
2. CE: Chip enable
3. CLE: Command latch enable
4. ALE: Address latch enable
5. RE: Read enable
6. WE: Write enable
7. R/B: Ready/busy status
8. DQ0-DQ7: Data input/output lines
9. NC: No connection (reserved pin)
10. GND: Ground

Functional Features

• Page Read/Program/Erase Operations: The MT29F1G08ABBEAHC-IT:E supports page-level read, program, and erase operations, allowing for efficient data manipulation.
• Block Management: It incorporates advanced block management techniques to optimize the lifespan and performance of the NAND flash memory.
• Error Correction: The product utilizes error correction codes (ECC) to detect and correct errors, ensuring data integrity.
• Wear-Leveling: To prevent premature wear on specific memory cells, wear-leveling algorithms evenly distribute write operations across the entire memory array.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may limit its lifespan in certain applications.
• Relatively slower write speeds compared to other non-volatile memory technologies.

Working Principles

The MT29F1G08ABBEAHC-IT:E is based on NAND flash memory technology. It stores data by trapping electrons in a floating gate within each memory cell. When a voltage is applied, the trapped electrons determine the cell's state, representing either a "0" or a "1". The data can be read, programmed, or erased at the page level using specific commands and control signals.

Detailed Application Field Plans

The MT29F1G08ABBEAHC-IT:E finds extensive application in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

• MT29F1G08ABBEAHC-IT
• MT29F1G08ABBEAHC-ITE
• MT29F1G08ABBEAHC-ITD
• MT29F1G08ABBEAHC-ITD:E
• MT29F1G08ABBEAHC-ITD:G
• MT29F1G08ABBEAHC-ITD:H

These alternative models offer similar specifications and functionality, providing flexibility for different design requirements.

In conclusion, the MT29F1G08ABBEAHC-IT:E is a NAND flash memory product with a high storage capacity, fast data transfer rate, and reliable performance. It is widely used in various electronic devices and offers advantages such as low power consumption and compact packaging. However, it has limitations in terms of endurance and relatively slower write speeds compared to other non-volatile memory technologies. The product operates based on NAND flash memory principles and finds applications in diverse fields. Additionally, there are several alternative models available with similar features and functionality.