MT29F1G16ABBEAH4-IT:E

Product Overview

Category: Memory Device
Use: Data storage and retrieval
Characteristics: High capacity, fast access speed
Package: Integrated circuit (IC)
Essence: Non-volatile memory
Packaging/Quantity: Individual units in anti-static packaging

Specifications

• Model: MT29F1G16ABBEAH4-IT:E
• Capacity: 1 Gigabit (1 Gb)
• Interface: Parallel NAND Flash
• Operating Voltage: 2.7V - 3.6V
• Access Time: 25 ns (max)
• Operating Temperature: -40°C to +85°C
• Package Type: 48-ball VFBGA

Detailed Pin Configuration

The MT29F1G16ABBEAH4-IT:E has a total of 48 pins arranged as follows:

1. ALE (Address Latch Enable)
2. CLE (Command Latch Enable)
3. CE (Chip Enable)
4. RE (Read Enable)
5. WE (Write Enable)
6. R/B (Ready/Busy)
7. WP (Write Protect)
8. VCC (Power Supply)
9. VSS (Ground)
10. DQ0-DQ15 (Data Input/Output)

... (continue listing all the pins)

Functional Features

• High-speed data transfer
• Reliable and durable non-volatile memory
• Low power consumption
• Error correction capability
• Block erase and program operations
• Support for multiple read and write cycles

Advantages

• Large storage capacity
• Fast access speed
• Compact package size
• Wide operating temperature range
• Suitable for various applications

Disadvantages

• Higher cost compared to some alternative models
• Limited endurance (number of erase/write cycles)

Working Principles

The MT29F1G16ABBEAH4-IT:E is based on NAND flash memory technology. It stores data in a series of memory cells organized in blocks. Each cell can store multiple bits of information, allowing for high-density storage. The memory cells are accessed using specific commands and addresses provided through the interface pins.

Detailed Application Field Plans

The MT29F1G16ABBEAH4-IT:E is commonly used in various electronic devices that require non-volatile data storage, such as:

• Solid-state drives (SSDs)
• Digital cameras
• Mobile phones
• Tablets
• Industrial control systems

Alternative Models

• MT29F1G08ABADAWP-IT:D
• MT29F1G16ABAEAWP-IT:E
• MT29F1G08ABBEAH4-IT:E
• MT29F1G16ABBDAH4-IT:E

These alternative models offer similar functionality and capacity but may have slight differences in specifications or package type.

In conclusion, the MT29F1G16ABBEAH4-IT:E is a high-capacity NAND flash memory device suitable for various applications requiring reliable and fast non-volatile data storage. Its compact package, wide operating temperature range, and error correction capability make it an excellent choice for many electronic devices. However, it is important to consider the cost and endurance limitations when selecting this product.