MT29F256G08CJABBWP-12:B

Product Overview

Category

The MT29F256G08CJABBWP-12:B belongs to the category of NAND Flash memory products.

Use

It is used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer
• Non-volatile memory
• Large storage capacity
• Low power consumption

Package

The MT29F256G08CJABBWP-12:B is typically available in a small form factor package suitable for surface mounting on printed circuit boards.

Essence

The essence of this product lies in its ability to store and retrieve digital data reliably and efficiently.

Packaging/Quantity

The MT29F256G08CJABBWP-12:B is commonly packaged in trays or reels and is available in varying quantities depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 256GB
• Interface: NAND Flash
• Voltage: 3.3V
• Speed: 12ns
• Package Type: BGA (Ball Grid Array)

Detailed Pin Configuration

The detailed pin configuration of the MT29F256G08CJABBWP-12:B includes pins for power supply, data input/output, control signals, and other interface connections. A comprehensive pinout diagram can be obtained from the product datasheet.

Functional Features

• Page-based architecture for efficient data programming and erase operations
• Advanced error correction capabilities for data integrity
• Wear-leveling algorithms to extend the lifespan of the memory cells
• Support for various interface protocols for seamless integration with different systems

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rates
• Low power consumption
• Reliable data retention

Disadvantages

• Susceptible to physical damage if mishandled
• Limited program/erase cycles compared to other non-volatile memory technologies

Working Principles

The MT29F256G08CJABBWP-12:B operates based on the principles of NAND Flash memory, where digital data is stored in a grid of memory cells. When data is written or read, specific electrical signals are applied to the memory cells to alter their state, allowing for the storage and retrieval of digital information.

Detailed Application Field Plans

The MT29F256G08CJABBWP-12:B is widely used in applications requiring high-capacity, non-volatile data storage. Some common application fields include: - Mobile devices - Digital cameras - Solid-state drives (SSDs) - Industrial automation systems - Embedded computing devices

Detailed and Complete Alternative Models

Some alternative models to the MT29F256G08CJABBWP-12:B include: - Samsung K9K8G08U0M - Micron MT29F256G08CECABH6-12:B - Toshiba TH58NVG7D2FLA89

In conclusion, the MT29F256G08CJABBWP-12:B NAND Flash memory device offers high-capacity, reliable data storage with fast access times, making it suitable for a wide range of electronic applications.

[Word Count: 443]