Micron Technology Inc.
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MT29F256G08CMCBBH2-10:B

MT29F256G08CMCBBH2-10:B

Product Overview

Category

The MT29F256G08CMCBBH2-10:B belongs to the category of NAND Flash memory products.

Use

It is used for storing data in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity
  • Fast read and write speeds
  • Low power consumption
  • Reliable data retention

Package

The MT29F256G08CMCBBH2-10:B is typically available in a small form factor package suitable for surface mounting on printed circuit boards.

Essence

The essence of this product lies in its ability to provide high-density non-volatile storage for electronic devices.

Packaging/Quantity

It is commonly packaged in tape and reel format with varying quantities depending on the manufacturer's specifications.

Specifications

  • Storage Capacity: 256 gigabits (32 gigabytes)
  • Interface: NAND Flash
  • Voltage Supply: 2.7V - 3.6V
  • Operating Temperature: -40°C to 85°C
  • Data Transfer Rate: Up to 200 megabytes per second (read), up to 50 megabytes per second (write)

Detailed Pin Configuration

The detailed pin configuration for the MT29F256G08CMCBBH2-10:B includes pins for power supply, data transfer, control signals, and other necessary connections. A comprehensive diagram or table is typically provided in the product datasheet.

Functional Features

  • Page-based architecture for efficient data storage and retrieval
  • Built-in error correction mechanisms for data integrity
  • Wear-leveling algorithms to extend the lifespan of the memory cells
  • Support for various NAND Flash management functions

Advantages and Disadvantages

Advantages

  • High storage capacity
  • Fast data transfer rates
  • Low power consumption
  • Reliable data retention

Disadvantages

  • Limited program/erase cycles compared to other types of memory
  • Susceptible to physical damage if mishandled

Working Principles

The MT29F256G08CMCBBH2-10:B operates based on the principles of NAND Flash memory, utilizing electrically programmable cells to store and retrieve digital data. When data is written, it is stored in individual memory cells within the NAND array. Reading data involves accessing specific memory cells and retrieving the stored information.

Detailed Application Field Plans

The MT29F256G08CMCBBH2-10:B is widely used in applications requiring high-capacity non-volatile storage, including: - Smartphones and tablets - Digital cameras and camcorders - Solid-state drives (SSDs) for computers and embedded systems - Industrial and automotive electronics

Detailed and Complete Alternative Models

Some alternative models to the MT29F256G08CMCBBH2-10:B include: - Samsung K9K8G08U0M - Micron MT29F256G08EECBBH3-12:B - Toshiba TH58NVG7D2FLA89

In conclusion, the MT29F256G08CMCBBH2-10:B offers high-density, reliable storage for a wide range of electronic devices, making it a crucial component in modern technology.

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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng MT29F256G08CMCBBH2-10:B trong giải pháp kỹ thuật

  1. What is the MT29F256G08CMCBBH2-10:B?

    • The MT29F256G08CMCBBH2-10:B is a 256Gb NAND flash memory device designed for high-performance applications.

  2. What are the key features of the MT29F256G08CMCBBH2-10:B?

    • It offers a high-speed interface, advanced memory management, and reliability features suitable for demanding technical solutions.

  3. How can I interface with the MT29F256G08CMCBBH2-10:B in my design?

    • The MT29F256G08CMCBBH2-10:B supports standard NAND flash interfaces such as ONFI and Toggle Mode, making it compatible with a wide range of systems.

  4. What are the typical applications for the MT29F256G08CMCBBH2-10:B?

    • It is commonly used in solid-state drives (SSDs), industrial embedded systems, automotive infotainment, and other high-performance storage solutions.

  5. What is the maximum data transfer rate of the MT29F256G08CMCBBH2-10:B?

    • It supports high-speed data transfer rates, enabling efficient read and write operations in data-intensive applications.

  6. Does the MT29F256G08CMCBBH2-10:B support error correction and wear leveling?

    • Yes, it incorporates advanced error correction and wear-leveling algorithms to ensure data integrity and extend the lifespan of the memory.

  7. What voltage levels does the MT29F256G08CMCBBH2-10:B operate at?

    • It typically operates at standard voltage levels, making it compatible with various system designs.

  8. Can the MT29F256G08CMCBBH2-10:B withstand harsh environmental conditions?

    • Yes, it is designed to withstand extended temperature ranges and has robust features for reliable operation in challenging environments.

  9. Are there any specific driver or firmware requirements for integrating the MT29F256G08CMCBBH2-10:B?

    • It may require specific drivers or firmware tailored to the host system, but it is generally compatible with standard NAND flash controllers.

  10. Where can I find detailed technical documentation for the MT29F256G08CMCBBH2-10:B?

    • Detailed technical documentation, including datasheets and application notes, can be obtained from the manufacturer's website or through authorized distributors.