MT29F2G08AABWP-ET TR

Product Overview

Category

MT29F2G08AABWP-ET TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F2G08AABWP-ET TR offers a storage capacity of 2 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with low power consumption.
• Durable design: It is designed to withstand harsh environmental conditions and has a long lifespan.
• Compact package: The MT29F2G08AABWP-ET TR comes in a small form factor, making it suitable for space-constrained devices.

Package and Quantity

The MT29F2G08AABWP-ET TR is packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with a quantity of [specify quantity].

Specifications

• Storage Capacity: 2 GB
• Interface: NAND
• Voltage Range: [specify voltage range]
• Operating Temperature: [specify temperature range]
• Data Transfer Rate: [specify data transfer rate]
• Package Type: SMT
• Package Dimensions: [specify dimensions]

Pin Configuration

The detailed pin configuration of MT29F2G08AABWP-ET TR is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE - Chip enable
4. RE - Read enable
5. WE - Write enable
6. A0-A18 - Address lines
7. DQ0-DQ7 - Data input/output lines
8. R/B - Ready/Busy status
9. WP - Write protect
10. NC - No connection

Note: This is a simplified pin configuration. Please refer to the datasheet for a complete and detailed pinout.

Functional Features

• High-speed data transfer: The MT29F2G08AABWP-ET TR offers fast read and write speeds, enabling efficient data storage and retrieval.
• Error correction: It incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear-leveling algorithm: The NAND flash memory utilizes wear-leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the device.
• Bad block management: It includes a bad block management system that identifies and isolates defective blocks, preventing data corruption.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Durable design
• Compact package size

Disadvantages

• Limited endurance: NAND flash memory has a limited number of program/erase cycles before it may become unreliable.
• Higher cost per gigabyte compared to other storage technologies.

Working Principles

The MT29F2G08AABWP-ET TR operates based on the principles of NAND flash memory technology. It uses a grid of memory cells, where each cell stores multiple bits of data. When writing data, an electrical charge is applied to the memory cells, altering their state. Reading data involves detecting the stored charge levels in the cells. The NAND architecture allows for high-density storage and fast access times.

Application Field Plans

The MT29F2G08AABWP-ET TR finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Alternative Models

1. MT29F2G08ABAEAWP-IT TR
2. MT29F2G08ABBEAH4-IT TR
3. MT29F2G08ABBEAH4-ITE TR
4. MT29F2G08ABBEAH4-ITE:D TR

Note: These alternative models offer similar specifications and functionality to the MT29F2G08AABWP-ET TR.

In conclusion, the MT29F2G08AABWP-ET TR is a NAND flash memory device with a high storage capacity, fast data transfer rate, and reliable performance. It is widely used in various electronic devices for data storage purposes. However, it has limitations in terms of endurance and higher cost per gigabyte compared to other storage technologies.