MT29F2G08ABBEAH4:E

Product Overview

Category

MT29F2G08ABBEAH4:E belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F2G08ABBEAH4:E offers a storage capacity of 2 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: The NAND flash memory technology ensures reliable and durable performance.
• Compact package: The MT29F2G08ABBEAH4:E comes in a small form factor, making it suitable for space-constrained devices.
• Low power consumption: It consumes minimal power, contributing to energy efficiency in portable devices.

Package and Quantity

The MT29F2G08ABBEAH4:E is available in a surface-mount package. The exact packaging and quantity may vary depending on the manufacturer and specific requirements.

Specifications

• Storage Capacity: 2 GB
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 Mbps (megabits per second)
• Erase/Program Cycles: Up to 100,000 cycles

Pin Configuration

The detailed pin configuration for MT29F2G08ABBEAH4:E is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | GND | Ground | | 3 | A0-A18 | Address input pins | | 4 | CLE | Command latch enable | | 5 | ALE | Address latch enable | | 6 | CE# | Chip enable | | 7 | RE# | Read enable | | 8 | WE# | Write enable | | 9-16 | DQ0-DQ7 | Data input/output pins | | 17 | R/B# | Ready/Busy status | | 18 | WP# | Write protect | | 19 | VCCQ | Power supply voltage for I/O pins | | 20 | GNDQ | Ground for I/O pins |

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasing of data at the block level, providing flexibility in managing storage space.
• Random Access: Supports random access to specific memory locations, facilitating efficient data retrieval.
• Error Correction Code (ECC): Incorporates ECC algorithms to detect and correct errors, ensuring data integrity.
• Wear Leveling: Implements wear-leveling techniques to distribute write operations evenly across memory cells, enhancing longevity.

Advantages and Disadvantages

Advantages

• High storage capacity for ample data storage needs.
• Fast data transfer rate for quick read and write operations.
• Reliable performance with NAND flash memory technology.
• Compact package suitable for space-constrained devices.
• Low power consumption for energy efficiency.

Disadvantages

• Limited erase/program cycles compared to other non-volatile memory technologies.
• Susceptible to data loss in case of power failure during write operations.

Working Principles

MT29F2G08ABBEAH4:E utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of data, allowing for high storage density. The data is written and read by applying voltage to specific memory cells.

During a write operation, the desired data is programmed into the memory cells using electrical charges. Reading involves detecting the presence or absence of charges in the memory cells to retrieve the stored data. Erasing is performed at the block level by removing all charges from the selected blocks.

Detailed Application Field Plans

MT29F2G08ABBEAH4:E finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Alternative Models

Some alternative models that offer similar functionality to MT29F2G08ABBEAH4:E include: - Samsung K9K8G08U0D - Toshiba TH58NVG5D2ETA20 - Micron MT29F2G08ABAEAWP

These models can be considered as alternatives based on specific requirements and compatibility with the target device.

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