MT29F32G08CBCDBJ4-10:D

Product Overview

Category

MT29F32G08CBCDBJ4-10:D belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F32G08CBCDBJ4-10:D offers a storage capacity of 32 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a read speed of up to 100 megabytes per second (MB/s) and a write speed of up to 50 MB/s, this NAND flash memory enables quick data access and transfer.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring the integrity and security of stored data.
• Compact package: The MT29F32G08CBCDBJ4-10:D comes in a compact package, making it suitable for integration into small-sized electronic devices.
• Long lifespan: This NAND flash memory has a high endurance rating, allowing for frequent read and write operations without compromising its performance.

Packaging/Quantity

The MT29F32G08CBCDBJ4-10:D is typically packaged in a surface-mount technology (SMT) package. It is available in various quantities, ranging from individual units to bulk orders.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F32G08CBCDBJ4-10:D
• Memory Type: NAND Flash
• Storage Capacity: 32 GB
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48

Detailed Pin Configuration

The MT29F32G08CBCDBJ4-10:D has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. ALE
3. CLE
4. CE#
5. RE#
6. WE#
7. WP#
8. R/B#
9. DQ0
10. DQ1
11. DQ2
12. DQ3
13. DQ4
14. DQ5
15. DQ6
16. DQ7
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• Block Erase: The MT29F32G08CBCDBJ4-10:D supports block erase operations, allowing for efficient management of data blocks.
• Page Program: This NAND flash memory enables page program operations, enabling the writing of data at the page level.
• Read and Write Operations: The product provides fast read and write operations, facilitating quick access to stored data.
• Error Correction Code (ECC): ECC functionality is integrated into the MT29F32G08CBCDBJ4-10:D, ensuring data integrity by detecting and correcting errors during read and write operations.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Compact package
• Long lifespan

Disadvantages

• Limited compatibility with certain devices due to the parallel interface
• Higher power consumption compared to newer NAND flash memory technologies

Working Principles

The MT29F32G08CBCDBJ4-10:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These memory cells consist of floating-gate transistors that can store electrical charges to represent binary data.

During read operations, the controller sends a command to the NAND flash memory, specifying the desired memory address. The memory then retrieves the stored data from the corresponding memory cell and transfers it back to the controller.

Write operations involve sending a command along with the data to be written. The memory performs an erase operation on the target memory block and then writes the new data into the appropriate memory cells.

Detailed Application Field Plans

The MT29F32G08CBCDBJ4-10:D is widely used in various electronic devices that require high