MT29F4G08AACWC-ET:C TR

Product Overview

Category

The MT29F4G08AACWC-ET:C TR belongs to the category of NAND flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G08AACWC-ET:C TR offers a storage capacity of 4 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory chip enables high-speed data transfer, ensuring efficient performance.
• Reliable and durable: The product is designed to withstand frequent read and write operations, making it highly reliable and durable.
• Low power consumption: The MT29F4G08AACWC-ET:C TR is energy-efficient, consuming minimal power during operation.
• Compact package: This chip comes in a compact package, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F4G08AACWC-ET:C TR is typically packaged in trays or reels. The quantity per package can vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 4 GB
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

The pin configuration of the MT29F4G08AACWC-ET:C TR is as follows:

1. VCC
2. ALE
3. CLE
4. CE#
5. RE#
6. WE#
7. R/B#
8. WP#
9. VSS
10. NC
11. NC
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. VCC

Functional Features

• Page Read/Program/Erase Operations: The MT29F4G08AACWC-ET:C TR supports efficient read, program, and erase operations at the page level.
• Block Management: This chip incorporates advanced block management techniques to optimize data storage and improve overall performance.
• Error Correction Code (ECC): ECC algorithms are implemented to ensure data integrity and reliability.
• Wear-Leveling: The product employs wear-leveling algorithms to distribute write operations evenly across memory blocks, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage needs.
• Fast data transfer rate ensures efficient performance.
• Reliable and durable design withstands frequent read and write operations.
• Low power consumption contributes to energy efficiency.
• Compact package facilitates easy integration into electronic devices.

Disadvantages

• Limited compatibility with certain older devices that do not support NAND flash memory technology.
• Higher cost compared to other types of memory chips.

Working Principles

The MT29F4G08AACWC-ET:C TR operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, where data is stored in individual transistors. These transistors are organized into pages and blocks, allowing for efficient read, program, and erase operations. The chip's controller manages these operations, ensuring data integrity and optimal performance.

Detailed Application Field Plans

The MT29F4G08AACWC-ET:C TR finds extensive application in various electronic devices, including: 1. Smartphones and tablets: Used for storing operating systems, applications, and user data. 2. Digital cameras: Enables high-capacity storage for photos and videos. 3. Solid-state drives (SSDs): Serves as primary storage in SSDs, offering fast and reliable data access.

Detailed and Complete Alternative Models

1. MT29F4G08ABADAWP-IT:D TR
2. MT29F4G08ABADAH4-IT:E TR
3. MT29F4G08ABADAWP-IT:J TR
4. MT29F4G08ABADAH4-IT:K TR