MT29F4G08ABAEAWP-IT:E

Product Overview

Category

MT29F4G08ABAEAWP-IT:E belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F4G08ABAEAWP-IT:E offers a storage capacity of 4 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F4G08ABAEAWP-IT:E comes in a small form factor, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F4G08ABAEAWP-IT:E is packaged in a surface-mount technology (SMT) package. It is typically supplied in reels or trays, with quantities varying based on customer requirements.

Specifications

• Storage Capacity: 4 GB
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 10,000 cycles

Pin Configuration

The detailed pin configuration of MT29F4G08ABAEAWP-IT:E is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE - Chip enable
4. RE - Read enable
5. WE - Write enable
6. A0-A18 - Address inputs
7. DQ0-DQ15 - Data input/output
8. R/B - Ready/Busy status
9. CLE - Command latch enable
10. ALE - Address latch enable

Functional Features

• Page Program: Allows data to be written into the memory cells in page-sized increments.
• Block Erase: Enables erasing of data in large blocks, improving efficiency.
• Random Access: Provides direct access to any memory location, allowing for efficient data retrieval.
• Wear Leveling: Implements algorithms to evenly distribute write operations across memory cells, extending the lifespan of the NAND flash memory.
• Error Correction Code (ECC): Incorporates ECC techniques to detect and correct errors during data read/write operations.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact form factor

Disadvantages

• Limited erase/program cycles
• Susceptible to physical damage if mishandled

Working Principles

MT29F4G08ABAEAWP-IT:E utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on its floating gate.

During write operations, data is programmed into the memory cells by applying appropriate voltages to the control pins. Reading data involves sensing the electrical charge on the memory cells and converting it back into digital information.

Detailed Application Field Plans

MT29F4G08ABAEAWP-IT:E finds applications in various electronic devices that require non-volatile data storage. Some specific application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

• MT29F4G08ABAEAWP-IT:D
• MT29F4G08ABAEAWP-IT:F
• MT29F4G08ABAEAWP-IT:G
• MT29F4G08ABAEAWP-IT:H

These alternative models offer similar specifications and functionality to MT29F4G08ABAEAWP-IT:E, providing customers with options based on their specific requirements.

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