MT29F4G08ABBDAH4-IT:D TR

Product Overview

Category

The MT29F4G08ABBDAH4-IT:D TR belongs to the category of NAND flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G08ABBDAH4-IT:D TR offers a storage capacity of 4 gigabits (4 Gb).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory chip ensures reliable and consistent performance over extended periods.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F4G08ABBDAH4-IT:D TR comes in a compact package, enabling easy integration into various electronic devices.

Packaging/Quantity

This product is typically packaged in small surface-mount packages, such as ball grid array (BGA) or thin small outline package (TSOP). The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F4G08ABBDAH4-IT:D TR
• Memory Type: NAND Flash
• Capacity: 4 Gb
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: BGA or TSOP

Detailed Pin Configuration

The MT29F4G08ABBDAH4-IT:D TR has a specific pin configuration that facilitates its integration into electronic devices. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. CLE: Command latch enable
5. ALE: Address latch enable
6. CE: Chip enable
7. RE: Read enable
8. WE: Write enable
9. R/B: Ready/busy status
10. DQ0-DQ15: Data input/output

Functional Features

• Page Program: The MT29F4G08ABBDAH4-IT:D TR supports page programming, allowing data to be written in small increments.
• Block Erase: It enables the erasure of entire blocks of data, providing flexibility in managing storage space.
• Random Access: This NAND flash memory chip allows for random access to data, enabling efficient retrieval and modification.
• Error Correction Code (ECC): It incorporates ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: The MT29F4G08ABBDAH4-IT:D TR implements wear leveling techniques to evenly distribute write operations, extending the lifespan of the memory.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Susceptible to electrical interference: Like other electronic components, the MT29F4G08ABBDAH4-IT:D TR can be affected by electromagnetic interference.

Working Principles

The MT29F4G08ABBDAH4-IT:D TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information using a combination of charge levels. The data is accessed by applying appropriate voltages to the address and control pins, allowing for read and write operations.

Detailed Application Field Plans

The MT29F4G08ABBDAH4-IT:D TR finds application in various electronic devices that require non-volatile storage. Some of the common application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

• MT29F4G08ABADAH4-IT:D TR: Similar to the MT29F4G08ABBDAH4-IT:D TR, but with a different package type (TSOP).
• MT29F4G08ABBEAH4-IT:D TR: Another variant with a higher operating temperature range (-40°C to +105°C).
• MT29F4G08ABCHH4-IT:D TR: Offers a larger capacity of 8 gigabits (8 Gb) for applications requiring more storage space.

These alternative models provide similar functionality and can be considered as alternatives based on specific