MT29F4G08ABBEAH4-IT:E

Product Overview

Category

MT29F4G08ABBEAH4-IT:E belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F4G08ABBEAH4-IT:E offers a storage capacity of 4 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F4G08ABBEAH4-IT:E comes in a compact package, allowing for easy integration into various electronic devices.

Packaging/Quantity

MT29F4G08ABBEAH4-IT:E is typically packaged in surface-mount technology (SMT) packages. The exact packaging and quantity may vary depending on the manufacturer and customer requirements.

Specifications

• Storage Capacity: 4 GB
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT

Detailed Pin Configuration

The pin configuration of MT29F4G08ABBEAH4-IT:E is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. CLE: Command Latch Enable
5. ALE: Address Latch Enable
6. RE: Read Enable
7. WE: Write Enable
8. R/B: Ready/Busy
9. DQ0-DQ7: Data Input/Output

Functional Features

• Page Program Operation: MT29F4G08ABBEAH4-IT:E supports page program operations, allowing data to be written in small increments.
• Block Erase Operation: It enables the erasure of entire blocks of data, providing flexibility in managing stored information.
• Random Access: The product allows for random access to specific memory locations, facilitating efficient data retrieval.
• Error Correction Code (ECC): MT29F4G08ABBEAH4-IT:E incorporates ECC algorithms to ensure data integrity and reliability.

Advantages and Disadvantages

Advantages

• High storage capacity meets the demands of modern electronic devices.
• Fast data transfer rate enhances overall system performance.
• Low power consumption prolongs battery life.
• Compact package enables easy integration into various devices.
• Reliable performance ensures data integrity.

Disadvantages

• Limited lifespan: NAND flash memory has a finite number of write/erase cycles before it becomes unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

MT29F4G08ABBEAH4-IT:E utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading or writing data, the controller sends commands and addresses to the memory chip, enabling the desired operation.

Detailed Application Field Plans

MT29F4G08ABBEAH4-IT:E finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to MT29F4G08ABBEAH4-IT:E include: - MT29F4G08ABADAWP-IT - MT29F4G08ABAEAWP-IT - MT29F4G08ABBEAWP-IT - MT29F4G08ABADAWP:D - MT29F4G08ABAEAWP:D

These alternative models offer similar specifications and functionality, providing flexibility in choosing the most suitable NAND flash memory for specific applications.

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