MT29F4G16ABAEAWP-IT:E

Product Overview

Category

MT29F4G16ABAEAWP-IT:E belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F4G16ABAEAWP-IT:E offers a storage capacity of 4 gigabits (4 Gb).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: The NAND flash memory is designed to be durable and reliable, ensuring data integrity over extended periods.
• Low power consumption: It consumes minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F4G16ABAEAWP-IT:E is available in a small form factor, enabling its integration into space-constrained devices.

Package and Quantity

The MT29F4G16ABAEAWP-IT:E is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly supplied in reels or trays, with quantities ranging from hundreds to thousands per package.

Specifications

• Memory Type: NAND Flash
• Capacity: 4 Gb
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Pin Count: 48

Detailed Pin Configuration

The MT29F4G16ABAEAWP-IT:E has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. CE#
19. CLE#
20. WE#
21. RE#
22. WP#
23. R/B#
24. DQ0
25. DQ1
26. DQ2
27. DQ3
28. DQ4
29. DQ5
30. DQ6
31. DQ7
32. DQ8
33. DQ9
34. DQ10
35. DQ11
36. DQ12
37. DQ13
38. DQ14
39. DQ15
40. VSS
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. VCC

Functional Features

• Page Read/Program/Erase: The MT29F4G16ABAEAWP-IT:E supports page-level read, program, and erase operations, allowing for efficient data manipulation.
• Block Management: It incorporates advanced block management algorithms to optimize performance and extend the lifespan of the memory.
• Error Correction Code (ECC): ECC functionality is integrated to ensure data integrity and reliability.
• Wear Leveling: The NAND flash memory utilizes wear leveling techniques to distribute write operations evenly across the memory cells, preventing premature cell failure.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Low power consumption
• Compact form factor
• Reliable performance

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may limit its lifespan in certain applications.
• Susceptible to data corruption: While ECC helps mitigate errors, NAND flash memory is more prone to data corruption compared to other storage technologies.

Working Principles

The MT29F4G16ABAEAWP-IT:E utilizes the principles of NAND flash memory technology. It consists of multiple memory cells organized into blocks and pages. Each cell can store multiple bits of data using a floating-gate transistor structure.

During programming, an electrical charge is applied to the floating gate, trapping electrons and altering the threshold voltage of the transistor. This change in threshold voltage represents the stored data. Erasing involves removing the trapped charge from the floating gate, resetting the cell to an erased state.

Data is read by sensing the threshold voltage of the transistor and interpreting it as binary information. The control circuitry manages the various operations, including address decoding, data transfer, and error correction.

Detailed Application Field Plans

The MT29F4G16ABAEAWP-IT:E finds application in a wide range of electronic devices