MT29F64G08AEAAAC5-Z:A

Product Overview

Category: Memory Device
Use: Data storage and retrieval
Characteristics: High capacity, fast read/write speeds
Package: Integrated circuit (IC)
Essence: Non-volatile memory
Packaging/Quantity: Single unit per package

Specifications

• Model Number: MT29F64G08AEAAAC5-Z:A
• Capacity: 64 gigabytes (GB)
• Interface: Parallel NAND Flash
• Voltage: 3.3 volts (V)
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F64G08AEAAAC5-Z:A features a standard pin configuration for parallel NAND Flash devices. The pins are as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. DQ0-DQ15: Data inputs/outputs
5. WE#: Write enable
6. RE#: Read enable
7. CLE: Command latch enable
8. ALE: Address latch enable
9. CE#: Chip enable
10. R/B#: Ready/busy status
11. WP#: Write protect
12. RP#: Reset/power down
13. NC: No connection

Functional Features

• High-speed data transfer for efficient read/write operations
• Reliable and durable non-volatile memory
• Low power consumption for energy efficiency
• Error correction codes (ECC) for data integrity
• Block management algorithms for wear leveling and bad block management
• Support for various NAND Flash interfaces and protocols

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast data transfer rates - High endurance for frequent read/write operations - Versatile compatibility with different systems and devices

Disadvantages: - Relatively higher cost compared to other memory options - Limited lifespan due to program/erase cycles - Susceptible to physical damage if mishandled

Working Principles

The MT29F64G08AEAAAC5-Z:A is based on NAND Flash technology, which utilizes a grid of memory cells to store data. It operates by applying electrical charges to the floating gate within each cell to represent binary values (0s and 1s). These charges can be programmed or erased using specific voltage levels.

During read operations, the stored charges are measured to determine the data value. Write operations involve applying appropriate voltages to program the desired data into the memory cells. Erase operations clear the charges from selected cells, allowing them to be reprogrammed.

Detailed Application Field Plans

The MT29F64G08AEAAAC5-Z:A is widely used in various applications that require high-capacity and reliable data storage. Some common application fields include:

1. Solid-state drives (SSDs)
2. Embedded systems
3. Automotive electronics
4. Industrial control systems
5. Consumer electronics (e.g., digital cameras, gaming consoles)

Detailed and Complete Alternative Models

1. MT29F64G08CBAAAWP-IT:C - Similar specifications, but with additional write protection feature.
2. MT29F64G08CBAAWP-IT:E - Equivalent capacity and performance, but with extended temperature range (-40°C to +105°C).
3. MT29F64G08CBAAAWP-IT:G - Same capacity and interface, but with enhanced ECC capabilities.

These alternative models offer similar functionality and compatibility, providing options based on specific requirements and preferences.

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