Category: Memory Device
Use: Data storage and retrieval
Characteristics: High capacity, reliable performance
Package: Integrated circuit (IC)
Essence: Non-volatile memory
Packaging/Quantity: Individual units
The MT29F64G08AECABJ1-10ITZ:A features a standard pin configuration for a parallel NAND flash memory device. The pins are as follows:
Advantages: - Large storage capacity - Fast data access and transfer speeds - Suitable for various applications - Low power consumption - High reliability and durability
Disadvantages: - Relatively higher cost compared to other memory options - Limited compatibility with certain systems or devices
The MT29F64G08AECABJ1-10ITZ:A is based on NAND flash memory technology. It utilizes a grid of memory cells, each capable of storing multiple bits of data. The memory cells are organized into blocks, which can be individually erased or programmed. Data is written to and read from the memory using specific commands and addresses.
The MT29F64G08AECABJ1-10ITZ:A is widely used in various electronic devices and systems that require high-capacity non-volatile storage. Some common application fields include:
These alternative models offer similar specifications and functionality to the MT29F64G08AECABJ1-10ITZ:A, providing users with a range of options for their specific requirements.
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What is the MT29F64G08AECABJ1-10ITZ:A?
What is the storage capacity of the MT29F64G08AECABJ1-10ITZ:A?
What is the operating voltage range for the MT29F64G08AECABJ1-10ITZ:A?
What is the interface used for connecting the MT29F64G08AECABJ1-10ITZ:A to a system?
What is the maximum data transfer rate supported by the MT29F64G08AECABJ1-10ITZ:A?
Is the MT29F64G08AECABJ1-10ITZ:A suitable for industrial applications?
Does the MT29F64G08AECABJ1-10ITZ:A support wear-leveling and error correction?
Can the MT29F64G08AECABJ1-10ITZ:A be used in automotive applications?
What is the typical lifespan of the MT29F64G08AECABJ1-10ITZ:A?
Are there any specific software drivers or tools available for the MT29F64G08AECABJ1-10ITZ:A?