MT29F64G08AMCBBH2-12:B

Product Overview

Category

MT29F64G08AMCBBH2-12:B belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F64G08AMCBBH2-12:B offers a storage capacity of 64 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, making it suitable for demanding applications.
• Low power consumption: The MT29F64G08AMCBBH2-12:B is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.
• Compact package: This NAND flash memory comes in a compact package, making it easy to integrate into various electronic devices.

Packaging/Quantity

The MT29F64G08AMCBBH2-12:B is typically packaged in a small form factor, such as a surface-mount device (SMD) package. The exact packaging and quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Part Number: MT29F64G08AMCBBH2-12:B
• Memory Type: NAND Flash
• Storage Capacity: 64 GB
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Data Transfer Rate: Up to 100 megabytes per second (MB/s)
• Operating Temperature Range: -40°C to 85°C
• Package Type: Small Outline Integrated Circuit (SOIC)
• Package Dimensions: 14mm x 20mm

Detailed Pin Configuration

The MT29F64G08AMCBBH2-12:B has a specific pin configuration that facilitates its integration into electronic devices. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. CE: Chip Enable
4. CLE: Command Latch Enable
5. ALE: Address Latch Enable
6. RE: Read Enable
7. WE: Write Enable
8. R/B: Ready/Busy status
9. DQ0-DQ7: Data Input/Output lines
10. WP: Write Protect
11. RST: Reset
12. NC: No Connection

Note: The pin configuration may vary depending on the package type and manufacturer's specifications.

Functional Features

• Page Program: The MT29F64G08AMCBBH2-12:B supports page programming, allowing data to be written in small increments.
• Block Erase: This NAND flash memory enables block erase operations, which erase a large portion of data simultaneously, enhancing efficiency.
• Error Correction Code (ECC): The product incorporates ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: The MT29F64G08AMCBBH2-12:B employs wear-leveling techniques to distribute write operations evenly across memory blocks, extending the lifespan of the device.
• Bad Block Management: It includes mechanisms to manage and mark defective blocks, preventing their use for data storage.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate ensures efficient data processing.
• Reliable performance suitable for demanding applications.
• Low power consumption helps prolong battery life.
• Compact package facilitates integration into various devices.

Disadvantages

• Limited compatibility with certain legacy systems or devices that do not support NAND flash memory.
• Relatively higher cost compared to other types of memory.

Working Principles

The MT29F64G08AMCBBH2-12:B operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, each consisting of a floating-gate transistor. Data is stored in these cells by trapping electric charges within the floating gate, representing binary values (0s and 1s). The presence or absence of charges determines the stored data.

During read operations, the controller applies appropriate voltages to the memory cells, allowing the charges to be sensed and interpreted as data. Write operations involve applying specific voltage levels to program or erase the memory cells, modifying the charge distribution within the floating gates.

Detailed Application Field Plans

The MT29F64G08AMCBBH2-12:B finds applications in various electronic devices and industries, including:

1. Smartphones and tablets: Provides high-capacity storage for apps, media files, and user data. 2