MT29F64G08CECDBJ4-10:D

Product Overview

Category

MT29F64G08CECDBJ4-10:D belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F64G08CECDBJ4-10:D offers a storage capacity of 64 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: It provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The device is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a compact package, allowing for easy integration into various electronic devices.

Package and Quantity

The MT29F64G08CECDBJ4-10:D is typically available in a surface-mount package. The exact packaging and quantity may vary depending on the manufacturer and specific requirements.

Specifications

• Part Number: MT29F64G08CECDBJ4-10:D
• Memory Type: NAND Flash
• Storage Capacity: 64 GB
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: Surface Mount
• Package Dimensions: [Insert dimensions]
• RoHS Compliance: Yes

Detailed Pin Configuration

The pin configuration of MT29F64G08CECDBJ4-10:D is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. RE: Read Enable
5. WE: Write Enable
6. A0-A18: Address Inputs
7. DQ0-DQ15: Data Input/Output
8. R/B: Ready/Busy
9. CLE: Command Latch Enable
10. ALE: Address Latch Enable

Please refer to the datasheet for a complete pin configuration diagram.

Functional Features

• High-speed data transfer: The MT29F64G08CECDBJ4-10:D offers fast read and write speeds, facilitating efficient data transfer.
• Error correction: It incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear-leveling algorithm: The device employs wear-leveling algorithms to distribute data evenly across memory cells, extending its lifespan.
• Block management: It supports efficient block management, allowing for easy erasure and programming of data blocks.
• Power-saving mode: The NAND flash memory features a power-saving mode that reduces power consumption during idle periods.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Susceptible to electrical interference: Like other electronic components, it can be affected by electromagnetic interference.

Working Principles

The MT29F64G08CECDBJ4-10:D utilizes NAND flash technology, which stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information using charge levels. When reading data, the controller applies voltages to specific cells and measures the resulting current to determine the stored value. During writing, the controller adjusts the charge levels in the cells to represent the desired data.

Detailed Application Field Plans

The MT29F64G08CECDBJ4-10:D is widely used in various applications, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F64G08CBABA: Similar specifications with a different package type.
2. MT29F64G08CBACD: Higher endurance rating with similar storage capacity.
3. MT29F64G08CBADW: Lower power consumption variant with comparable performance.

Please note that alternative models may vary in terms of specific features, package types, or compatibility with certain devices. It is recommended to consult the manufacturer's documentation for detailed information on alternative models.

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