MT29F8G08ABACAWP-IT:C

Product Overview

Category

MT29F8G08ABACAWP-IT:C belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F8G08ABACAWP-IT:C offers a storage capacity of 8 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F8G08ABACAWP-IT:C comes in a compact form factor, allowing for easy integration into various electronic devices.

Package and Quantity

The MT29F8G08ABACAWP-IT:C NAND flash memory is typically packaged in a small surface-mount package. The exact package dimensions and type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from hundreds to thousands per package.

Specifications

• Storage Capacity: 8 gigabytes (GB)
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabits per second (Mbps)
• Endurance: Up to 100,000 program/erase cycles
• Cell Type: Multi-Level Cell (MLC)

Detailed Pin Configuration

The pin configuration of MT29F8G08ABACAWP-IT:C NAND flash memory is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. CLE: Command Latch Enable
5. ALE: Address Latch Enable
6. RE: Read Enable
7. WE: Write Enable
8. R/B: Ready/Busy
9. DQ0-DQ7: Data Input/Output

Functional Features

• Page Program: Allows data to be written into the memory cells in page-sized increments.
• Block Erase: Enables erasing of entire blocks of data, improving efficiency.
• Random Access: Provides quick access to specific data within the memory.
• Error Correction Code (ECC): Incorporates ECC algorithms to detect and correct errors during data retrieval.
• Wear Leveling: Distributes write operations evenly across the memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity for data-intensive applications.
• Fast data transfer rate for improved performance.
• Low power consumption for energy-efficient operation.
• Compact form factor for easy integration into various devices.
• Reliable performance over extended periods.

Disadvantages

• Limited endurance compared to other types of non-volatile memory.
• Relatively higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

MT29F8G08ABACAWP-IT:C NAND flash memory utilizes a series of memory cells that store data by trapping electric charges within floating gate transistors. These charges represent binary information (0s and 1s). The presence or absence of charges determines the stored data. To read or write data, specific voltages are applied to the appropriate pins, enabling the movement of charges within the memory cells.

Detailed Application Field Plans

MT29F8G08ABACAWP-IT:C NAND flash memory finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to MT29F8G08ABACAWP-IT:C NAND flash memory include: - Samsung K9K8G08U0B - Toshiba TH58NVG6D2FLA89 - Micron MT29F8G08ABADA - Intel JS29F64G08CAMDB

These alternative models offer similar storage capacities and functionalities, providing options for different design requirements.

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