MT29F8G08ABBCAH4:C

Product Overview

Category

MT29F8G08ABBCAH4:C belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F8G08ABBCAH4:C offers a storage capacity of 8 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: The NAND flash memory ensures reliable and durable performance.
• Compact package: The product comes in a small form factor, making it suitable for space-constrained devices.
• Low power consumption: It consumes minimal power, contributing to energy efficiency.

Package and Quantity

MT29F8G08ABBCAH4:C is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays containing multiple units.

Specifications

• Storage Capacity: 8 GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabits per second (Mbps)
• Package Type: Surface Mount Technology (SMT)

Pin Configuration

The detailed pin configuration of MT29F8G08ABBCAH4:C can be found in the product datasheet provided by the manufacturer. It includes pins for power supply, data input/output, control signals, and other necessary connections.

Functional Features

• Page Program Operation: Allows data to be written into the memory cells in page-sized increments.
• Block Erase Operation: Enables erasing of data in large block sizes, improving efficiency.
• Read Operation: Facilitates the retrieval of stored data from the memory cells.
• Wear-Leveling Algorithm: Distributes write operations evenly across the memory cells, extending the lifespan of the NAND flash memory.

Advantages

• High storage capacity for ample data storage needs.
• Fast data transfer rate for quick read and write operations.
• Reliable performance ensures data integrity.
• Compact package size suitable for space-constrained devices.
• Low power consumption contributes to energy efficiency.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles before it may become unreliable.
• Susceptible to data corruption if not properly managed or protected.

Working Principles

MT29F8G08ABBCAH4:C utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These cells can be electrically programmed and erased to store and modify data. The memory cells are accessed through an interface that allows for reading, writing, and erasing operations.

Detailed Application Field Plans

MT29F8G08ABBCAH4:C finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Alternative Models

• MT29F8G08ABBCAH4:A
• MT29F8G08ABBCAH4:B
• MT29F8G08ABBCAH4:D

These alternative models offer similar specifications and functionality to MT29F8G08ABBCAH4:C, providing options for different sourcing or compatibility requirements.

Note: This entry provides a general overview of MT29F8G08ABBCAH4:C. For detailed technical information, please refer to the product datasheet or consult the manufacturer.