MT41K512M8RH-125 AAT:E

Product Overview

Category

MT41K512M8RH-125 AAT:E belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in computer systems, servers, and high-performance computing applications that require fast and reliable memory access.

Characteristics

• High-speed operation: The MT41K512M8RH-125 AAT:E offers fast data transfer rates, allowing for efficient processing of large amounts of data.
• Large capacity: With a capacity of 512 megabits, this DRAM module provides ample storage space for demanding applications.
• Low power consumption: The module is designed to operate at low voltage levels, reducing power consumption and heat generation.
• Error correction: It incorporates error correction code (ECC) functionality, ensuring data integrity and reliability.

Package

The MT41K512M8RH-125 AAT:E is packaged in a small outline dual in-line memory module (SODIMM) form factor. This compact design allows for easy installation in laptops and other space-constrained devices.

Essence

The essence of the MT41K512M8RH-125 AAT:E lies in its ability to provide high-performance memory capabilities in a compact and energy-efficient package.

Packaging/Quantity

This DRAM module is typically sold individually or in packs of multiple units, depending on the supplier. The exact quantity may vary.

Specifications

• Part Number: MT41K512M8RH-125 AAT:E
• Memory Type: DDR3 SDRAM
• Capacity: 512 megabits
• Speed: 125 MHz
• Voltage: 1.5V
• Organization: 64M words x 8 bits
• Interface: 204-pin SODIMM
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT41K512M8RH-125 AAT:E follows the standard pin configuration for DDR3 SODIMM modules. The pinout diagram is as follows:

[Insert pin configuration diagram here]

Functional Features

• High-speed data transfer: The module supports high-speed data transfer rates, enabling efficient processing of large datasets.
• Error correction: ECC functionality ensures data integrity by detecting and correcting errors in real-time.
• Low power consumption: The module operates at low voltage levels, reducing power consumption and heat generation.
• Compatibility: It is designed to be compatible with various computer systems and platforms.

Advantages and Disadvantages

Advantages

• Fast data transfer rates enhance system performance.
• Error correction capabilities ensure data reliability.
• Compact form factor allows for easy installation in space-constrained devices.
• Low power consumption reduces energy costs.

Disadvantages

• Limited capacity compared to higher-end memory modules.
• May not be compatible with older computer systems that do not support DDR3 technology.

Working Principles

The MT41K512M8RH-125 AAT:E operates based on the principles of DDR3 SDRAM technology. It stores data in a matrix of capacitors, which are organized into rows and columns. When a read or write operation is initiated, the memory controller sends signals to access specific rows and columns, allowing data to be read from or written to the memory cells.

Detailed Application Field Plans

The MT41K512M8RH-125 AAT:E is suitable for a wide range of applications, including: - Laptops and notebooks - Desktop computers - Servers - Workstations - Networking equipment - Embedded systems

Detailed and Complete Alternative Models

Some alternative models that offer similar specifications and functionality to the MT41K512M8RH-125 AAT:E include: - MT41K512M8RH-125 B - MT41K512M8RH-125 C - MT41K512M8RH-125 D

These alternative models can be considered based on specific requirements and compatibility with the target system.

In conclusion, the MT41K512M8RH-125 AAT:E is a high-performance DDR3 SODIMM module that offers fast data transfer rates, error correction capabilities, and low power consumption. It is suitable for various computing applications and comes in a compact form factor. While it has some limitations in terms of capacity and compatibility, alternative models are available to cater to different needs.