MT45W4MW16BCGB-708 WT

Basic Information Overview

• Category: Memory chip
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed operation
  • Low power consumption
• Package: BGA (Ball Grid Array)
• Essence: Provides reliable and efficient data storage solution
• Packaging/Quantity: Available in reels, typically 2500 pieces per reel

Specifications

• Capacity: 4 Megabits (512 Kilobytes)
• Organization: 4M x 16
• Voltage Supply: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns
• Package Dimensions: 8mm x 13mm

Detailed Pin Configuration

The MT45W4MW16BCGB-708 WT has a total of 48 pins arranged as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | A0-A19 | Address inputs | | 20 | DQ0-DQ15 | Data inputs/outputs | | 21 | WE# | Write enable control | | 22 | CE# | Chip enable control | | 23 | OE# | Output enable control | | 24 | CLE | Command latch enable | | ... | ... | ... |

Functional Features

• Non-volatile memory retains data even when power is removed
• High-speed operation allows for quick data access
• Low power consumption extends battery life in portable devices
• Reliable performance ensures data integrity
• Easy integration into existing electronic systems

Advantages

• Non-volatile memory eliminates the need for constant power supply to retain data
• High-speed operation enables fast data read and write operations
• Low power consumption reduces energy usage and extends battery life
• Reliable performance ensures data integrity and system stability

Disadvantages

• Limited storage capacity compared to other memory technologies
• Higher cost per bit compared to some alternative memory solutions
• Limited compatibility with certain older electronic devices

Working Principles

The MT45W4MW16BCGB-708 WT is based on Flash memory technology. It utilizes a grid of memory cells, each capable of storing a single bit of information. These cells can be electrically programmed and erased, allowing for non-volatile data storage. The chip's internal circuitry manages the reading, writing, and erasing of data.

Detailed Application Field Plans

The MT45W4MW16BCGB-708 WT is commonly used in various electronic devices, including: - Mobile phones - Tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• MT45W4MW16BCGB-708 WT: 4 Megabit parallel Flash memory chip
• MT25QL256ABA1EW7-0SIT: 256 Megabit Quad SPI Flash memory chip
• MT29F2G08ABAEAWP-IT:E: 2 Gigabit NAND Flash memory chip
• MT47H64M16HR-3 IT:H: 1 Gigabit DDR3 SDRAM chip

These alternative models offer different capacities, interfaces, and features to suit specific application requirements.

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