MT46H32M16LFBF-6 AIT:C

Product Overview

Category

The MT46H32M16LFBF-6 AIT:C belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for data storage and retrieval purposes.

Characteristics

• High-speed operation: The MT46H32M16LFBF-6 AIT:C offers fast data transfer rates, enabling efficient processing of large amounts of information.
• Large storage capacity: With a capacity of 32 megabits, this DRAM chip can store a significant amount of data.
• Low power consumption: The chip is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT46H32M16LFBF-6 AIT:C is available in a small form factor package, allowing for space-efficient integration into electronic devices.
• Reliable performance: This DRAM chip is known for its stable and reliable operation, ensuring data integrity.

Packaging/Quantity

The MT46H32M16LFBF-6 AIT:C is typically packaged in trays or reels. The quantity per package varies depending on the manufacturer's specifications.

Specifications

• Part Number: MT46H32M16LFBF-6 AIT:C
• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 32 Megabits
• Organization: 4 banks x 8,388,608 words x 16 bits
• Operating Voltage: 1.7V - 1.95V
• Speed: 6ns (max)
• Interface: Parallel
• Package Type: FBGA (Fine-Pitch Ball Grid Array)
• Temperature Range: Commercial (0°C to +70°C)

Detailed Pin Configuration

The MT46H32M16LFBF-6 AIT:C has a total of 60 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. /RAS
21. /CAS
22. /WE
23. /CS
24. BA0
25. BA1
26. A0
27. A1
28. A2
29. A3
30. A4
31. A5
32. A6
33. A7
34. A8
35. A9
36. A10
37. A11
38. A12
39. A13
40. A14
41. A15
42. VDD
43. VDD
44. VDD
45. VSS
46. VSS
47. VSS
48. VSS
49. VSS
50. VSS
51. VSS
52. VSS
53. VSS
54. VSS
55. VSS
56. VSS
57. VSS
58. VSS
59. VSS
60. VSS

Functional Features

• High-speed data access: The MT46H32M16LFBF-6 AIT:C offers fast read and write operations, facilitating efficient data processing.
• Auto-refresh capability: The chip automatically refreshes the stored data, ensuring data integrity over time.
• Burst mode support: It supports burst mode operations, enabling rapid consecutive data transfers.
• Low power standby mode: The chip can enter a low-power standby mode when not in use, conserving energy.

Advantages and Disadvantages

Advantages

• High-speed operation allows for quick data access and processing.
• Large storage capacity accommodates a significant amount of data.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package enables space-efficient integration into electronic devices.
• Reliable performance ensures data integrity.

Disadvantages

• Limited compatibility with certain older device architectures.
• Higher cost compared to other types of memory chips.
• Sensitivity to electrical noise may require additional shielding measures.

Working Principles

The MT46H32M16LFBF-6 AIT:C operates based on the principles of dynamic random access memory. It stores data as charge in tiny capacitors within the chip. To read or write data, the chip activates specific rows and columns within its memory array using control signals. The stored