MT46V128M4BN-5B:F TR

Product Overview

Category

MT46V128M4BN-5B:F TR belongs to the category of dynamic random-access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data access
• Non-volatile memory
• Low power consumption
• Compact size

Package

MT46V128M4BN-5B:F TR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide fast and reliable data storage and retrieval in various electronic devices.

Packaging/Quantity

MT46V128M4BN-5B:F TR is typically packaged in trays or reels and is available in large quantities for bulk orders.

Specifications

• Memory Type: Dynamic Random-Access Memory (DRAM)
• Capacity: 128 Megabits (16 Megabytes)
• Organization: 4 banks x 4,194,304 words x 4 bits
• Operating Voltage: 3.3 Volts
• Speed Grade: -5B
• Package Type: SODIMM
• Temperature Range: Commercial (0°C to +70°C)

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. WE#
12. CAS#
13. RAS#
14. CKE
15. CS#
16. BA0
17. BA1
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. VDD

Functional Features

• High-speed data access: MT46V128M4BN-5B:F TR offers fast read and write operations, enabling quick data retrieval and storage.
• Low power consumption: This product is designed to minimize power usage, making it suitable for battery-powered devices.
• Easy integration: The SODIMM package allows for easy installation and integration into various electronic devices.
• Reliable performance: With its dynamic random-access memory technology, this product ensures reliable and consistent data storage.

Advantages and Disadvantages

Advantages

• Fast data access speeds
• Low power consumption
• Compact size for space-constrained devices
• Easy integration into electronic devices

Disadvantages

• Limited capacity compared to other memory technologies
• Requires refreshing of data periodically

Working Principles

MT46V128M4BN-5B:F TR operates based on the principles of dynamic random-access memory. It stores data in capacitors within the memory cells, which need to be refreshed periodically to maintain the stored information. When a read or write operation is initiated, the memory controller sends signals to the appropriate pins, allowing data to be accessed or written.

Detailed Application Field Plans

MT46V128M4BN-5B:F TR finds applications in various electronic devices, including: 1. Personal computers 2. Laptops 3. Servers 4. Smartphones 5. Tablets 6. Gaming consoles

Detailed and Complete Alternative Models

1. MT46V64M8P-5B:F
2. MT46V32M16P-5B:F
3. MT46V16M32P-5B:F
4. MT46V8M64P-5B:F

These alternative models offer similar specifications and functionality to MT46V128M4BN-5B:F TR, but with different memory capacities.

In conclusion, MT46V128M4BN-5B:F TR is a dynamic random-access memory chip that provides high-speed data access, low power consumption, and easy integration into electronic devices. While it has limited capacity compared to other memory technologies, it offers reliable performance and finds applications in various devices such as computers, smartphones, and gaming consoles. Alternative models with different capacities are also available for specific requirements.