MT46V128M8P-6T:A TR

Product Overview

Category

The MT46V128M8P-6T:A TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data during operation.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports fast read and write operations
• Compact size for easy integration into various electronic devices

Package

The MT46V128M8P-6T:A TR is typically available in a small form factor package, making it suitable for space-constrained applications.

Essence

The essence of this product lies in its ability to provide high-performance data storage and retrieval functions, enabling efficient operation of electronic devices.

Packaging/Quantity

The MT46V128M8P-6T:A TR is commonly packaged in reels or trays, with each package containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer and customer requirements.

Specifications

• Part Number: MT46V128M8P-6T:A TR
• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 128 Megabit x 8
• Operating Voltage: 3.3V
• Speed Grade: -6T
• Package Type: Small Form Factor (SFF)
• Pin Count: 66 pins
• Data Rate: 166 MHz
• Refresh Mode: Auto-refresh and self-refresh
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT46V128M8P-6T:A TR has a total of 66 pins, which are assigned specific functions for proper operation. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. WE#
39. CAS#
40. RAS#
41. CS#
42. CKE
43. BA0
44. BA1
45. VSS
46. CLK
47. DQM0
48. DQM1
49. VSS
50. DM0
51. DM1
52. VSS
53. NC
54. VCC
55. VCC
56. VSS
57. VSS
58. VSS
59. VSS
60. VSS
61. VSS
62. VSS
63. VSS
64. VSS
65. VSS
66. VSS

Functional Features

• High-speed data access: The MT46V128M8P-6T:A TR offers fast read and write operations, enabling quick data access in electronic devices.
• Large storage capacity: With an organization of 128 Megabit x 8, this DRAM chip provides ample storage space for data.
• Auto-refresh and self-refresh modes: The chip supports both auto-refresh and self-refresh modes to ensure data integrity during operation.
• Low power consumption: The MT46V128M8P-6T:A TR is designed to consume minimal power, making it energy-efficient.

Advantages and Disadvantages

Advantages

• High-speed data access enables efficient performance in electronic devices.
• Large storage capacity allows for the storage of a significant amount of data.
• Compact size facilitates easy integration into various electronic devices.
• Supports auto-refresh and self-refresh modes for data integrity.
• Low power consumption contributes to energy efficiency.

Disadvantages

• Being a volatile memory, data is lost when power is disconnected.
• Requires constant power supply for proper functioning.

Working Principles

The MT46V128M8P-6T:A TR operates based on the principles of dynamic random access memory. It stores data in capacitors within the memory cells, which are organized in a matrix-like structure.