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MT47H128M16RT-25E AAT:C

MT47H128M16RT-25E AAT:C

Product Overview

Category

The MT47H128M16RT-25E AAT:C belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

  • High-speed operation: The MT47H128M16RT-25E AAT:C offers fast data access and transfer rates, enabling efficient processing of large amounts of information.
  • Large storage capacity: With a capacity of 128 megabits (16 megabytes), this memory device can store a significant amount of data.
  • Low power consumption: The product is designed to minimize power usage, making it suitable for battery-powered devices.
  • Reliable performance: It features robust error correction capabilities and high endurance, ensuring data integrity and longevity.

Package

The MT47H128M16RT-25E AAT:C is available in a compact and standardized package that facilitates easy integration into various electronic systems. The specific package type may vary depending on the manufacturer.

Essence

The essence of the MT47H128M16RT-25E AAT:C lies in its ability to provide reliable and high-performance data storage solutions for electronic devices.

Packaging/Quantity

Typically, the MT47H128M16RT-25E AAT:C is packaged in trays or reels, with each unit individually sealed to protect it from external elements. The quantity per package may vary depending on the manufacturer's specifications.

Specifications

  • Memory Type: Dynamic Random Access Memory (DRAM)
  • Organization: 128 Megabits x 16 bits
  • Operating Voltage: 2.5V
  • Speed Grade: 25E
  • Temperature Range: Industrial (-40°C to +85°C)
  • Interface: Double Data Rate 3 (DDR3)
  • Pin Count: 96 pins
  • Package Type: Small Outline Dual In-Line Memory Module (SO-DIMM)

Detailed Pin Configuration

The MT47H128M16RT-25E AAT:C features a total of 96 pins, each serving a specific purpose in the memory device's operation. The detailed pin configuration is as follows:

(Pin Number) - (Pin Name) - (Function) 1 - VDD - Power Supply 2 - DQ0 - Data Input/Output Bit 0 3 - DQ1 - Data Input/Output Bit 1 4 - DQ2 - Data Input/Output Bit 2 5 - DQ3 - Data Input/Output Bit 3 6 - DQ4 - Data Input/Output Bit 4 7 - DQ5 - Data Input/Output Bit 5 8 - DQ6 - Data Input/Output Bit 6 9 - DQ7 - Data Input/Output Bit 7 10 - DQ8 - Data Input/Output Bit 8 11 - DQ9 - Data Input/Output Bit 9 12 - DQ10 - Data Input/Output Bit 10 13 - DQ11 - Data Input/Output Bit 11 14 - DQ12 - Data Input/Output Bit 12 15 - DQ13 - Data Input/Output Bit 13 16 - DQ14 - Data Input/Output Bit 14 17 - DQ15 - Data Input/Output Bit 15 18 - VSS - Ground 19 - VDD - Power Supply 20 - NC - No Connection ... (Continued for remaining pins)

Functional Features

The MT47H128M16RT-25E AAT:C offers several functional features that enhance its performance and usability:

  1. High-speed data transfer: The device supports fast data transfer rates, enabling efficient processing and retrieval of information.
  2. Error correction capabilities: It incorporates advanced error correction techniques to ensure data integrity and minimize the risk of data loss or corruption.
  3. Low power consumption: The memory device is designed to operate with minimal power consumption, making it suitable for energy-efficient electronic devices.
  4. Compatibility: It conforms to industry-standard DDR3 interface specifications, ensuring compatibility with a wide range of electronic systems.

Advantages and Disadvantages

Advantages

  • High-speed operation facilitates quick data access and processing.
  • Large storage capacity allows for storing significant amounts of data.
  • Low power consumption prolongs battery life in portable devices.
  • Robust error correction capabilities ensure data integrity.
  • Compatibility with industry standards enables easy integration into various systems.

Disadvantages

  • Relatively higher cost compared to other memory technologies.
  • Limited scalability beyond the specified capacity.
  • Sensitivity to electrical noise and environmental conditions.

Working Principles

The MT47H128M16RT-25E AAT:C operates based on the principles of dynamic random access memory (DRAM). It stores data

Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng MT47H128M16RT-25E AAT:C trong giải pháp kỹ thuật

  1. Question: What is the maximum operating frequency of the MT47H128M16RT-25E AAT:C?
    Answer: The maximum operating frequency of this memory module is 800 MHz.

  2. Question: What is the capacity of the MT47H128M16RT-25E AAT:C?
    Answer: This memory module has a capacity of 2 GB (gigabytes).

  3. Question: What is the voltage requirement for the MT47H128M16RT-25E AAT:C?
    Answer: The voltage requirement for this memory module is 1.8V.

  4. Question: Is the MT47H128M16RT-25E AAT:C compatible with DDR3 technology?
    Answer: Yes, this memory module is based on DDR3 technology.

  5. Question: Can the MT47H128M16RT-25E AAT:C be used in laptops or desktop computers?
    Answer: Yes, this memory module can be used in both laptops and desktop computers, as long as they support DDR3 memory.

  6. Question: Does the MT47H128M16RT-25E AAT:C support ECC (Error Correction Code)?
    Answer: No, this memory module does not support ECC.

  7. Question: What is the CAS latency of the MT47H128M16RT-25E AAT:C?
    Answer: The CAS latency of this memory module is CL11.

  8. Question: Can the MT47H128M16RT-25E AAT:C be used in server applications?
    Answer: Yes, this memory module can be used in server applications that require DDR3 memory.

  9. Question: Is the MT47H128M16RT-25E AAT:C compatible with dual-channel memory configurations?
    Answer: Yes, this memory module can be used in dual-channel memory configurations.

  10. Question: What is the temperature range for the MT47H128M16RT-25E AAT:C?
    Answer: The temperature range for this memory module is -40°C to +85°C.