MT47H256M8EB-25E AIT:C TR

Product Overview

Category

MT47H256M8EB-25E AIT:C TR belongs to the category of semiconductor memory products.

Use

This product is primarily used as a memory component in electronic devices such as computers, smartphones, and other digital devices.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable data retention
• Wide operating temperature range

Package

MT47H256M8EB-25E AIT:C TR is available in a small form factor package, making it suitable for compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and efficiently, enhancing the overall performance of electronic devices.

Packaging/Quantity

MT47H256M8EB-25E AIT:C TR is typically packaged in reels or trays, with a quantity of several hundred or thousand units per package.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 256 Megabits (32 Megabytes)
• Organization: 8 Meg x 8 bits x 8 banks
• Speed Grade: DDR3-1600 (PC3-12800)
• Operating Voltage: 1.5V
• Operating Temperature Range: -40°C to +85°C
• Interface: Double Data Rate (DDR) interface

Detailed Pin Configuration

The pin configuration of MT47H256M8EB-25E AIT:C TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. BA0
39. BA1
40. RAS#
41. CAS#
42. WE#
43. CS#
44. VSS
45. DM0
46. DM1
47. VCC
48. VSS

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable read and write latency settings

Advantages and Disadvantages

Advantages

• Fast data transfer speeds enhance overall system performance.
• Large storage capacity allows for the handling of extensive data.
• Low power consumption helps to prolong battery life in portable devices.
• Reliable data retention ensures data integrity over time.
• Wide operating temperature range enables usage in various environments.

Disadvantages

• Higher cost compared to other memory technologies.
• Limited scalability beyond a certain capacity.
• Sensitivity to electrical noise and interference.

Working Principles

MT47H256M8EB-25E AIT:C TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in cells that are organized in a matrix of rows and columns. The memory controller sends commands to access specific rows and columns, allowing for the reading and writing of data.

Detailed Application Field Plans

MT47H256M8EB-25E AIT:C TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Smartphones and tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT47H256M8EB-25E AIT:C TR include: - MT47H128M8BT-25E AIT:C TR - MT47H512M16HR-25E AIT:C TR - MT47H1024M32HR-25E AIT:C TR - MT47H2048M64HR-25E AIT:C TR

These alternative models vary in capacity, organization, and speed grade, providing options to suit different requirements.

In conclusion, MT47H256M8EB-25E AIT:C TR is a high-performance SDRAM memory