MT47H64M8CB-5E IT:B TR

Product Overview

Category

MT47H64M8CB-5E IT:B TR belongs to the category of dynamic random-access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, laptops, servers, and mobile phones for storing and accessing data quickly.

Characteristics

• High-speed data access
• Non-volatile memory
• Low power consumption
• Compact size
• Wide temperature range

Package

MT47H64M8CB-5E IT:B TR is packaged in a small form factor, making it suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to provide fast and reliable data storage and retrieval capabilities, enhancing the overall performance of electronic devices.

Packaging/Quantity

MT47H64M8CB-5E IT:B TR is typically sold in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Dynamic Random-Access Memory (DRAM)
• Capacity: 64 megabits (8 megabytes)
• Organization: 8 banks x 8,192 rows x 4,096 columns
• Voltage Supply: 1.8V
• Speed Grade: -5E
• Operating Temperature Range: -40°C to +85°C
• Package Type: FBGA (Fine-Pitch Ball Grid Array)
• Pin Count: 60 pins

Detailed Pin Configuration

The detailed pin configuration of MT47H64M8CB-5E IT:B TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. BA0
39. BA1
40. RAS#
41. CAS#
42. WE#
43. CS#
44. CKE
45. CK
46. VSS
47. DM0
48. DM1
49. VREF
50. VSS
51. ODT0
52. ODT1
53. VSS
54. RESET#
55. VSS
56. VDD
57. VDD
58. VDD
59. VDD
60. VSS

Functional Features

• High-speed data access: MT47H64M8CB-5E IT:B TR offers fast read and write operations, enabling efficient data processing.
• Low power consumption: This product is designed to minimize power consumption, making it suitable for battery-powered devices.
• Wide temperature range: It can operate reliably in extreme temperature conditions, ensuring consistent performance.
• Non-volatile memory: The stored data remains intact even when the power supply is disconnected.

Advantages and Disadvantages

Advantages

• Fast data access speed
• Low power consumption
• Compact size
• Wide temperature range operation

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit of storage

Working Principles

MT47H64M8CB-5E IT:B TR operates based on the principles of dynamic random-access memory. It stores data in capacitors within each memory cell, which are periodically refreshed to maintain the stored information. When a read or write operation is performed, the appropriate row and column addresses are accessed to retrieve or modify the data.

Detailed Application Field Plans

MT47H64M8CB-5E IT:B TR finds applications in various electronic devices, including: 1. Computers and laptops for system memory 2. Servers for high-performance data processing 3. Mobile phones for quick app loading and multitasking capabilities 4. Automotive electronics for reliable data storage in harsh environments 5. Industrial control systems for efficient data handling

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT47H64M8CB-5E IT:B TR include: 1.