MT49H32M18CFM-18:B TR

Product Overview

Category

MT49H32M18CFM-18:B TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Compact package size

Package

MT49H32M18CFM-18:B TR is available in a small form factor package, which allows for easy integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and efficiently, enhancing the overall performance of electronic devices.

Packaging/Quantity

MT49H32M18CFM-18:B TR is typically packaged in reels or trays, with a specific quantity per package depending on the manufacturer's specifications.

Specifications

• Model: MT49H32M18CFM-18:B TR
• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 32 megabits (4 megabytes)
• Speed: 18 nanoseconds
• Voltage: 1.8 volts
• Interface: Parallel

Detailed Pin Configuration

The pin configuration of MT49H32M18CFM-18:B TR may vary depending on the specific package and manufacturer. However, a typical pin configuration includes:

1. VDD - Power supply voltage
2. VSS - Ground
3. DQ0-DQ15 - Data input/output lines
4. A0-A10 - Address lines
5. WE - Write enable
6. CAS - Column address strobe
7. RAS - Row address strobe
8. CLK - Clock signal
9. CKE - Clock enable
10. CS - Chip select

Please refer to the product datasheet for the complete and accurate pin configuration.

Functional Features

• High-speed data access
• Non-volatile storage
• Error correction capabilities
• Low power consumption
• Compatibility with various electronic devices

Advantages and Disadvantages

Advantages

• Fast data access speeds
• Large storage capacity
• Low power consumption
• Compact package size
• Error correction capabilities

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance (number of read/write cycles)

Working Principles

MT49H32M18CFM-18:B TR operates based on the principles of dynamic random access memory (DRAM). It stores data in capacitors within an integrated circuit, which are periodically refreshed to maintain the stored information. The data is accessed by sending specific addresses to the memory module, allowing for rapid retrieval and modification of stored data.

Detailed Application Field Plans

MT49H32M18CFM-18:B TR finds applications in a wide range of electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles - Networking equipment

Its high-speed performance, large storage capacity, and low power consumption make it suitable for demanding applications that require efficient data storage and retrieval.

Detailed and Complete Alternative Models

Some alternative models to MT49H32M18CFM-18:B TR include: - MT49H32M18FM-18:E TR - MT49H32M18BM-18:A TR - MT49H32M18CFM-18:A TR

These alternative models may have slight variations in specifications or features, so it is important to consult the respective datasheets for detailed information.

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