Micron Technology Inc.
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MT49H64M9CBM-25E:B
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MT49H64M9CBM-25E:B

Product Overview

Category

MT49H64M9CBM-25E:B belongs to the category of semiconductor memory products.

Use

This product is primarily used as a high-speed synchronous dynamic random-access memory (SDRAM) module.

Characteristics

  • High-speed operation
  • Large storage capacity
  • Synchronous interface
  • Low power consumption

Package

MT49H64M9CBM-25E:B comes in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide fast and reliable data storage and retrieval for various electronic devices.

Packaging/Quantity

Each package of MT49H64M9CBM-25E:B contains one SODIMM module.

Specifications

  • Memory Type: SDRAM
  • Capacity: 64 megabytes (MB)
  • Speed Grade: 25E:B
  • Operating Voltage: 2.5 volts (V)
  • Data Rate: 400 megatransfers per second (MT/s)
  • Organization: 8M words x 8 bits
  • Refresh Mode: Auto-refresh and self-refresh
  • CAS Latency: 2, 3

Detailed Pin Configuration

The pin configuration of MT49H64M9CBM-25E:B is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. VSS
  29. A8
  30. A9
  31. A10
  32. A11
  33. A12
  34. A13
  35. A14
  36. A15
  37. VSS
  38. BA0
  39. BA1
  40. RAS#
  41. CAS#
  42. WE#
  43. VSS
  44. CLK
  45. CKE
  46. CS#
  47. DM0
  48. DM1
  49. VSS
  50. VDD

Functional Features

  • High-speed data transfer
  • Burst mode operation
  • On-die termination (ODT) for improved signal integrity
  • Programmable burst length and latency
  • Auto-precharge and auto-refresh capabilities

Advantages and Disadvantages

Advantages

  • Fast and efficient data storage and retrieval
  • Low power consumption
  • Compact form factor
  • Reliable performance

Disadvantages

  • Limited storage capacity compared to other memory technologies
  • Higher cost per unit compared to traditional memory modules

Working Principles

MT49H64M9CBM-25E:B operates based on the principles of synchronous dynamic random-access memory. It uses a clock signal to synchronize data transfers between the memory module and the host device. The data is stored in capacitors within the memory cells, which are refreshed periodically to maintain data integrity.

Detailed Application Field Plans

MT49H64M9CBM-25E:B finds applications in various electronic devices, including but not limited to: - Laptops and notebooks - Desktop computers - Networking equipment - Industrial control systems - Embedded systems

Detailed and Complete Alternative Models

Some alternative models to MT49H64M9CBM-25E:B include: - MT49H64M9CHD-25E:B - MT49H64M9CTG-25E:B - MT49H64M9CTH-25E:B - MT49H64M9CTK-25E:B - MT49H64M9CTT-25E:B

These alternative models offer similar specifications and functionality, providing flexibility in choosing the most suitable memory module for specific applications.

Word count: 511 words

Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng MT49H64M9CBM-25E:B trong giải pháp kỹ thuật

Sure! Here are 10 common questions and answers related to the application of MT49H64M9CBM-25E:B in technical solutions:

  1. Question: What is the capacity of the MT49H64M9CBM-25E:B memory module?
    Answer: The MT49H64M9CBM-25E:B has a capacity of 64 megabytes (MB).

  2. Question: What is the operating voltage range for this memory module?
    Answer: The operating voltage range for the MT49H64M9CBM-25E:B is 2.5V.

  3. Question: What is the maximum clock frequency supported by this memory module?
    Answer: The MT49H64M9CBM-25E:B supports a maximum clock frequency of 400 MHz.

  4. Question: Is the MT49H64M9CBM-25E:B compatible with DDR2 memory interfaces?
    Answer: Yes, the MT49H64M9CBM-25E:B is designed to be compatible with DDR2 memory interfaces.

  5. Question: Can this memory module be used in both desktop and laptop computers?
    Answer: Yes, the MT49H64M9CBM-25E:B can be used in both desktop and laptop computers that support DDR2 memory.

  6. Question: Does the MT49H64M9CBM-25E:B support ECC (Error Correction Code)?
    Answer: No, the MT49H64M9CBM-25E:B does not support ECC.

  7. Question: What is the CAS latency of this memory module?
    Answer: The CAS latency of the MT49H64M9CBM-25E:B is CL5.

  8. Question: Can I use multiple MT49H64M9CBM-25E:B modules in a single system?
    Answer: Yes, you can use multiple MT49H64M9CBM-25E:B modules in a system to increase the overall memory capacity.

  9. Question: Is this memory module compatible with dual-channel memory configurations?
    Answer: Yes, the MT49H64M9CBM-25E:B is compatible with dual-channel memory configurations.

  10. Question: What is the temperature range for the operation of this memory module?
    Answer: The MT49H64M9CBM-25E:B has an operating temperature range of -40°C to +85°C.

Please note that these answers are based on general information about the MT49H64M9CBM-25E:B memory module and may vary depending on specific technical requirements and implementations.