N25Q064A13EW9D0E

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Non-volatile Memory
• Characteristics:
  • High-speed data transfer
  • Low power consumption
  • Large storage capacity
• Package: 8-pin SOIC (Small Outline Integrated Circuit)
• Essence: Flash memory chip
• Packaging/Quantity: Individually packaged, quantity varies depending on manufacturer

Specifications

• Memory Capacity: 64 Megabits (8 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycles: Up to 100,000 cycles
• Data Retention: Up to 20 years

Detailed Pin Configuration

1. Chip Select (/CS)
2. Serial Clock (SCLK)
3. Serial Data Input (SI)
4. Serial Data Output (SO)
5. Write Protect (/WP)
6. Hold (/HOLD)
7. Ground (GND)
8. Power Supply (VCC)

Functional Features

• High-speed read and write operations
• Sector erase and byte/page program operations
• Software and hardware write protection
• Deep power-down mode for low-power operation
• Fast program and erase times

Advantages

• High-speed data transfer allows for quick access to stored information
• Low power consumption prolongs battery life in portable devices
• Large storage capacity accommodates a wide range of applications
• Compact package size saves board space in electronic designs

Disadvantages

• Limited erase/program cycles may affect the lifespan of the chip
• Higher cost compared to traditional non-volatile memory options
• Vulnerable to data loss in case of power failure during write operations

Working Principles

The N25Q064A13EW9D0E is based on the NOR flash memory technology. It utilizes a grid of memory cells, where each cell stores one bit of information. The data is stored by trapping electric charges in the floating gate of the memory cell. The presence or absence of these charges determines the binary state of the cell.

During read operations, the stored charges are sensed and amplified to retrieve the stored data. Write operations involve applying high voltages to the memory cells to either trap or release charges, altering their binary state.

Detailed Application Field Plans

• Embedded systems
• Consumer electronics
• Automotive applications
• Industrial control systems
• Networking equipment

Detailed and Complete Alternative Models

1. N25Q032A13EF840F - 32 Megabit (4 Megabyte) capacity, same package and interface
2. N25Q128A13EF840E - 128 Megabit (16 Megabyte) capacity, same package and interface
3. N25Q256A13EF840G - 256 Megabit (32 Megabyte) capacity, same package and interface

(Note: The above alternative models are from the same product family and share similar specifications and features.)

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