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2N5152L

2N5152L Transistor

Product Overview

The 2N5152L is a bipolar junction transistor (BJT) belonging to the category of small-signal transistors. It is commonly used for amplification and switching applications due to its high frequency and low noise characteristics. The transistor is typically packaged in a TO-92 package and is available in various quantities per package.

Basic Information

  • Category: Small-signal transistor
  • Use: Amplification and switching
  • Characteristics: High frequency, low noise
  • Package: TO-92
  • Packaging/Quantity: Varies

Specifications

The 2N5152L transistor has the following specifications: - Maximum Collector-Base Voltage: 40V - Maximum Collector-Emitter Voltage: 30V - Maximum Emitter-Base Voltage: 5V - Continuous Collector Current: 0.1A - Power Dissipation: 0.625W - Transition Frequency: 150MHz

Detailed Pin Configuration

The 2N5152L transistor has three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

The 2N5152L transistor offers the following functional features: - High frequency capability - Low noise amplification - Reliable switching performance

Advantages and Disadvantages

Advantages

  • High frequency capability
  • Low noise amplification
  • Compact TO-92 package

Disadvantages

  • Limited collector current capacity
  • Relatively low power dissipation

Working Principles

The 2N5152L operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its terminals to amplify or switch electronic signals.

Detailed Application Field Plans

The 2N5152L transistor finds application in various electronic circuits, including: - Audio amplifiers - Radio frequency (RF) circuits - Switching circuits

Detailed and Complete Alternative Models

Some alternative models to the 2N5152L transistor include: - 2N2222 - BC547 - 2N3904 - BC548

In conclusion, the 2N5152L transistor is a versatile component suitable for amplification and switching applications in various electronic circuits, offering high frequency capability and low noise characteristics.

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