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JAN1N6473
Product Overview
- Category: Diode
- Use: Rectification and voltage regulation
- Characteristics: High current capability, low forward voltage drop
- Package: DO-41
- Essence: Silicon rectifier diode
- Packaging/Quantity: Bulk packaging, quantity varies
Specifications
- Forward Voltage Drop: 0.7V
- Reverse Voltage: 100V
- Forward Current: 1A
- Operating Temperature: -65°C to 175°C
Detailed Pin Configuration
The JAN1N6473 diode has two pins, anode and cathode. The anode is connected to the positive terminal of the circuit, while the cathode is connected to the negative terminal.
Functional Features
- Efficient rectification of AC to DC
- Low forward voltage drop ensures minimal power loss
- High current capability allows for diverse applications
Advantages
- High current capability
- Low forward voltage drop
- Wide operating temperature range
Disadvantages
- Relatively higher reverse recovery time compared to some modern diodes
- Bulkier package compared to surface mount diodes
Working Principles
The JAN1N6473 diode operates on the principle of unidirectional conduction, allowing current flow in only one direction. When a positive voltage is applied to the anode with respect to the cathode, the diode conducts, allowing current to flow. In the reverse bias condition, the diode blocks the current flow.
Detailed Application Field Plans
- Power supply units
- Battery chargers
- Voltage regulators
- Rectifiers in electronic circuits
Detailed and Complete Alternative Models
- 1N4001
- 1N4004
- 1N4007
- 1N5408
This completes the entry for JAN1N6473, covering its product details, specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
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What is JAN1N6473?
- JAN1N6473 is a high-reliability, military-grade silicon power rectifier diode designed for use in demanding applications.
What are the key specifications of JAN1N6473?
- The key specifications include a maximum repetitive peak reverse voltage of 200 volts, average forward current of 6 amps, and a forward voltage drop of 1.1 volts at 3 amps.
In what technical solutions can JAN1N6473 be used?
- JAN1N6473 can be used in power supplies, inverters, converters, and other electronic systems where high reliability and performance are required.
What are the advantages of using JAN1N6473 in technical solutions?
- The advantages include its rugged construction, high surge capability, low forward voltage drop, and high temperature stability, making it suitable for harsh operating conditions.
What are the potential applications for JAN1N6473 in aerospace and defense systems?
- JAN1N6473 can be used in avionics, radar systems, communication equipment, and other critical electronic systems where reliability under extreme conditions is essential.
Are there any specific handling or mounting considerations for JAN1N6473?
- It is important to follow proper ESD (electrostatic discharge) precautions and thermal management guidelines during handling and mounting to ensure the long-term reliability of the diode.
What are the temperature ratings for JAN1N6473?
- The diode is typically rated for operation over a temperature range of -65°C to +175°C, making it suitable for both commercial and military applications.
Can JAN1N6473 be used in automotive electronics?
- Yes, JAN1N6473 can be utilized in automotive systems such as power supplies, motor drives, and battery management due to its rugged design and high-temperature capabilities.
What are the industry standards and qualifications met by JAN1N6473?
- JAN1N6473 complies with MIL-PRF-19500/574 and is qualified to meet the stringent requirements of military and aerospace applications.
Where can I find detailed technical information and application notes for JAN1N6473?
- Detailed technical information, application notes, and specifications for JAN1N6473 can be found in the product datasheet provided by the manufacturer or distributor.