PDTD113ET,215

Product Category: PDTD113ET,215 belongs to the category of semiconductor devices.

Basic Information Overview: - Category: Semiconductor device - Use: Amplification and switching of electronic signals - Characteristics: High gain, low noise, and fast response - Package: SOT-23, SMD (Surface Mount Device) - Essence: NPN Bipolar Junction Transistor (BJT) - Packaging/Quantity: Available in reels with varying quantities

Specifications: - Maximum Collector-Base Voltage (Vcb): 50V - Maximum Collector Current (Ic): 100mA - DC Current Gain (hFE): 100 - 400 - Transition Frequency (ft): 250MHz - Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration: - Pin 1 (Emitter) - Pin 2 (Base) - Pin 3 (Collector)

Functional Features: - High current gain - Low saturation voltage - Fast switching speed - Small package size for space-constrained applications

Advantages: - Suitable for high-frequency applications - Low power consumption - Compatible with automated assembly processes

Disadvantages: - Susceptible to thermal runaway at high currents - Limited maximum voltage and current ratings

Working Principles: PDTD113ET,215 operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its three terminals to amplify or switch electronic signals.

Detailed Application Field Plans: This transistor is commonly used in audio amplifiers, signal processing circuits, and radio frequency (RF) applications due to its high transition frequency and low noise characteristics.

Detailed and Complete Alternative Models: - BC547B - 2N3904 - KSP2222A - MMBT3904

This comprehensive entry provides a detailed overview of PDTD113ET,215, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.