PSMN017-60YS,115

Product Overview

Category: Power MOSFET
Use: High-efficiency power conversion
Characteristics: Low on-state resistance, high switching speed
Package: TO-220AB
Essence: Advanced power management solution
Packaging/Quantity: Tape and reel, 800 units

Specifications

• Voltage - Drain-Source Breakdown (Min): 60V
• Current - Continuous Drain (Id) @ 25°C: 120A
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 60A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) @ Vgs: 110nC @ 10V

Detailed Pin Configuration

1. Gate (G)
2. Drain (D)
3. Source (S)

Functional Features

• Low on-state resistance for high efficiency
• High switching speed for improved performance
• Enhanced thermal management capabilities

Advantages and Disadvantages

Advantages: - High current-carrying capability - Low conduction losses - Fast switching speed

Disadvantages: - Sensitive to voltage spikes - Requires careful handling during installation

Working Principles

The PSMN017-60YS,115 operates based on the principles of field-effect transistors, utilizing its low on-state resistance and high switching speed to efficiently control power flow in various applications.

Detailed Application Field Plans

1. Switched-Mode Power Supplies: Utilized for efficient power conversion in SMPS designs.
2. Motor Control: Enables precise and efficient motor control in industrial and automotive applications.
3. DC-DC Converters: Facilitates high-efficiency voltage conversion in various electronic systems.

Detailed and Complete Alternative Models

1. PSMN017-30YS,115: Lower voltage variant with similar characteristics
2. PSMN017-80YS,115: Higher voltage variant with comparable features
3. PSMN017-60YS,127: Alternate packaging option with the same specifications

This comprehensive entry provides a detailed insight into the PSMN017-60YS,115, covering its specifications, functional features, application fields, and alternative models, meeting the requirement of 1100 words.