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PSMN1R0-30YLDX

PSMN1R0-30YLDX

Product Overview

Category

The PSMN1R0-30YLDX belongs to the category of power MOSFETs.

Use

It is commonly used in applications requiring high power switching and efficient energy management.

Characteristics

  • High power handling capability
  • Low on-state resistance
  • Fast switching speed
  • Efficient energy conversion

Package

The PSMN1R0-30YLDX is typically available in a TO-220 package.

Essence

This MOSFET is essential for power electronics applications where efficient power management is crucial.

Packaging/Quantity

The PSMN1R0-30YLDX is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 80A
  • Rds(on) (Max) @ Vgs = 10V: 1.0mΩ
  • Gate-Source Voltage (Vgs): ±20V
  • Power Dissipation (Pd): 300W
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The PSMN1R0-30YLDX has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High current handling capacity
  • Low on-state resistance for minimal power loss
  • Suitable for high-frequency switching applications
  • Enhanced thermal performance for reliability

Advantages

  • Excellent power handling capability
  • Low conduction losses
  • Fast switching characteristics
  • Reliable and robust design

Disadvantages

  • Higher cost compared to standard MOSFETs
  • Requires careful thermal management due to high power dissipation

Working Principles

The PSMN1R0-30YLDX operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.

Detailed Application Field Plans

The PSMN1R0-30YLDX is widely used in various applications, including: - Switch-mode power supplies - Motor control systems - Renewable energy systems - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the PSMN1R0-30YLDX include: - IRF1405 - FDP8878 - STP80NF55-06

In conclusion, the PSMN1R0-30YLDX is a high-performance power MOSFET suitable for demanding applications that require efficient power management and high reliability.

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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng PSMN1R0-30YLDX trong giải pháp kỹ thuật

Sure, here are 10 common questions and answers related to the application of PSMN1R0-30YLDX in technical solutions:

  1. Question: What is the maximum drain current for PSMN1R0-30YLDX?
    Answer: The maximum drain current for PSMN1R0-30YLDX is 100A.

  2. Question: What is the typical on-state resistance for PSMN1R0-30YLDX?
    Answer: The typical on-state resistance for PSMN1R0-30YLDX is 1.0mΩ.

  3. Question: What is the maximum power dissipation for PSMN1R0-30YLDX?
    Answer: The maximum power dissipation for PSMN1R0-30YLDX is 300W.

  4. Question: What is the gate-source voltage for PSMN1R0-30YLDX?
    Answer: The gate-source voltage for PSMN1R0-30YLDX is ±20V.

  5. Question: What is the operating temperature range for PSMN1R0-30YLDX?
    Answer: The operating temperature range for PSMN1R0-30YLDX is -55°C to 175°C.

  6. Question: Can PSMN1R0-30YLDX be used in automotive applications?
    Answer: Yes, PSMN1R0-30YLDX is suitable for automotive applications.

  7. Question: What type of package does PSMN1R0-30YLDX come in?
    Answer: PSMN1R0-30YLDX comes in a TO-220 package.

  8. Question: Is PSMN1R0-30YLDX RoHS compliant?
    Answer: Yes, PSMN1R0-30YLDX is RoHS compliant.

  9. Question: What are the typical applications for PSMN1R0-30YLDX?
    Answer: Typical applications for PSMN1R0-30YLDX include motor control, power supplies, and inverters.

  10. Question: What is the recommended gate drive voltage for PSMN1R0-30YLDX?
    Answer: The recommended gate drive voltage for PSMN1R0-30YLDX is 10V to 15V.