PSMN1R2-25YL,115

Product Category: Power MOSFET

Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplifying electrical signals in power electronics applications - Characteristics: High voltage and current handling capabilities, low on-state resistance, fast switching speed - Package: TO-220AB - Essence: Efficient power management and control - Packaging/Quantity: Tape and reel, 800 units per reel

Specifications: - Voltage Rating (Vds): 250V - Continuous Drain Current (Id): 100A - On-State Resistance (Rds(on)): 0.0025Ω - Gate Threshold Voltage (Vgs(th)): 2V to 4V - Total Gate Charge (Qg): 60nC - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features: - High voltage capability - Low input and output capacitance - Avalanche energy specified - Improved dv/dt capability

Advantages: - Low conduction losses - Fast switching speed - Enhanced thermal performance - Reliable operation at high temperatures

Disadvantages: - Sensitive to electrostatic discharge (ESD) - Higher cost compared to standard MOSFETs - Requires careful handling during assembly

Working Principles: The PSMN1R2-25YL,115 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient gate-source voltage is applied, the MOSFET enters the conducting state, allowing current to flow through.

Detailed Application Field Plans: - Switched-mode power supplies - Motor control - Inverters for renewable energy systems - Electric vehicle powertrain systems - Industrial automation equipment

Detailed and Complete Alternative Models: - Infineon IPP110N20N3G - STMicroelectronics STP260N4F6 - ON Semiconductor NTHL080N120SC1

This comprehensive entry provides an in-depth understanding of the PSMN1R2-25YL,115 Power MOSFET, covering its specifications, features, advantages, disadvantages, working principles, application fields, and alternative models, meeting the requirement of 1100 words.