PSMN1R6-30BL,118

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies and motor control
Characteristics: High efficiency, low on-resistance, fast switching speed
Package: TO-220AB
Essence: Power MOSFET for high-performance switching applications
Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications

• Voltage - Drain-Source Breakdown (V(BR)DSS): 30V
• Current - Continuous Drain (Id) @ 25°C: 80A
• Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 40A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) @ Vgs: 60nC @ 10V

Detailed Pin Configuration

The PSMN1R6-30BL,118 features a standard TO-220AB pin configuration with three pins: gate, drain, and source.

Functional Features

• High efficiency due to low on-resistance
• Fast switching speed for improved performance in power supply and motor control applications
• Low gate charge for reduced switching losses

Advantages and Disadvantages

Advantages: - High efficiency - Low on-resistance - Fast switching speed

Disadvantages: - Higher gate charge compared to some alternative models - Limited voltage range

Working Principles

The PSMN1R6-30BL,118 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently control power flow in switching applications.

Detailed Application Field Plans

This MOSFET is well-suited for use in various switching applications, including: - Power supplies - Motor control systems - DC-DC converters - Inverters

Detailed and Complete Alternative Models

• PSMN1R6-30YLC,115: Similar specifications with a different package (LFPAK)
• PSMN1R6-30PL,127: Lower gate charge and slightly higher on-resistance
• PSMN1R6-30MLDX,315: Enhanced thermal performance with a dual-sided cooling pad

Note: The word count may vary slightly depending on formatting and specific details included.