PSMN2R6-30YLC,115

Product Category: Power MOSFET

Basic Information Overview: - Category: Semiconductor - Use: Power switching applications - Characteristics: Low on-state resistance, high power handling capability - Package: TO-220AB - Essence: Efficient power management - Packaging/Quantity: Tape and reel, 800 units per reel

Specifications: - Voltage Rating: 30V - Current Rating: 100A - On-State Resistance: 1.8 mΩ - Gate-Source Voltage (Max): ±20V - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain

Functional Features: - Low on-state resistance for minimal power loss - High current handling capability - Fast switching speed for efficient power management

Advantages: - Enhanced power efficiency - Suitable for high-power applications - Reliable performance in demanding conditions

Disadvantages: - Higher cost compared to standard MOSFETs - Requires careful thermal management due to high power dissipation

Working Principles: The PSMN2R6-30YLC,115 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals. By modulating the gate-source voltage, the MOSFET can efficiently switch high currents with minimal power loss.

Detailed Application Field Plans: - Switching power supplies - Motor control systems - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models: - IRF3205 - FDP8870 - STP80NF70

This comprehensive entry provides a detailed overview of the PSMN2R6-30YLC,115, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.